62
Characteristic curves (N-channel)
V
DS
-I
D
Characteristics (Typical)
V
GS
-I
D
Temperature Characteristics (Typical)
I
DS
-R
DS(ON)
Characteristics (Typical)
I
D
-Re
(yfs)
Temperature Characteristics (Typical)
T
C
-R
DS(ON)
Characteristics (Typical)
V
DS
-Cpacitance Characteristics (Typical)
V
SD
-I
DR
Characteristics (Typical)
Safe Operating Area (SOA)
ch-c
-PW Characteristics
(T
a
=25
C)
Symbol
Ratings
Unit
V
M
100
V
I
O
6 (PW
100ms)
A
I
OP
8 (PW
1ms)
A
V
GSS
10
V
I
B
0.5
A
5 (T
a
=25
C)
35 (T
c
=25
C)
j-a
25
C/W
j-c
3.57
C/W
V
ISO
1000 (Between fin and lead pin, AC)
V
rms
T
j
150
C
T
stg
40 to +150
C
(T
a
=25
C)
Symbol
Unit
Conditions
V
(BR)DSS
100
V
I
D
=250
A, V
GS
=0V
I
GSS
500
nA
V
GS
=
10V
I
DSS
250
A
V
DS
=100V, V
GS
=0V
V
TH
1.0
2.0
V
V
DS
=10V, I
D
=250
A
Re(yfs)
1.1
1.7
S
V
DS
=10V, I
D
=4A
0.47
0.55
V
GS
=10V, I
D
=2A
0.60
0.78
V
GS
=4V, I
D
=2A
C
iss
230
pF
V
DS
=25V, f=1.0MHz,
C
oss
60
pF
V
GS
=0V
t
on
60
ns
I
D
=4A, V
DD
=50V,
t
off
50
ns
V
GS
=10V
V
SD
1.2
2.0
V
I
SD
=4A, V
GS
=0V
t
rr
250
ns
I
F
=
100mA
Specification
min
typ
max
P
T
W
R
DS(ON)
SLA5023
0
2
10
8
7
6
0
V
GS
=3V
4V
4.5V
V
DS
(V)
I
D
(A)
4
6
8
10V
5
4
3
2
1
3.5V
V
DS
=10V
25
C
125
C
0
2
4
6
8
I
D
(A)
V
GS
(V)
T
C
=40
C
8
7
6
0
5
4
3
2
1
V
GS
=10V
0
0
1
2
3
0.2
0.4
0.6
0.8
I
D
(A)
R
DS (ON)
(
)
4
5
6
7
8
V
GS
=4V
0.3
0.05
0.5
1
1
5
7
V
DS
=10V
25
C
125
C
I
D
(A)
Re (yfs) (S)
5
8
0.5
T
C
=40
C
0.1
0
10
20
30
40
50
5
50
100
700
Ciss
Coss
Crss
V
DS
(V)
Capacitance (pF)
500
10
V
GS
=0V
f=1MHz
0
1.0
1.5
V
GS
=0V
4V
I
DR
(A)
V
SD
(V)
0.5
10V
8
7
6
0
5
4
3
2
1
R
1
R
2
2
4
3
OUT
1
8
6
7
OUT
2
9
11
10
OUT
3
5
12
V
M
1
R
1
: 3k
typ R
2
: 80
typ
PNP Darlington + N-channel MOSFET
3-phase motor drive
0.1
1
0.5
10
5
100
50
1000
500
10000
5000
PW (mS)
20
10
5
1
0.5
0.2
ch-c
(
C / W)
40
0
0
50
100
150
0.6
0.8
1.0
1.2
V
GS
=10
V
R
DS (ON)
(
)
T
C
(
C)
0.4
0.2
V
GS
=4
V
(I
D
=2A)
0.5
0.1
1
5
10
50
100
1
5
10
(Tc=25
C)
D
I (pulse) max
1ms
100
s
10
ms (1shot)
I
D
(A)
V
DS
(V)
LIMITED
0.5
R
DS (ON)
Absolute maximum ratings
Electrical characteristics (Sink: N-channel MOSFET)
s
Equivalent circuit diagram
External dimensions
A
SLA
63
Characteristic curves (PNP)
I
C
-V
CE
Characteristics (Typical)
h
FE
-I
C
Characteristics (Typical)
h
FE
-I
C
Temperature Characteristics (Typical)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
V
CE
(sat)-I
B
Characteristics (Typical)
I
C
-V
BE
Temperature Characteristics (Typical)
j-a
-PW Characteristics
Safe Operating Area (SOA)
P
T
-T
a
Characteristics
(T
a
=25
C)
Symbol
Unit
Conditions
I
CBO
10
A
V
CB
=100V
I
EBO
10
mA
V
EB
=6V
V
CEO
100
V
I
C
=10mA
h
FE
2000
5000
12000
V
CE
=4V, I
C
=3A
V
CE
(sat)
1.5
V
V
BE
(sat)
2.2
V
V
FEC
1.3
V
I
FEC
=1A
t
rr
2.0
s
I
F
=
100mA
t
on
0.6
s
V
CC
30V
t
stg
1.6
s
I
C
=3A
t
f
0.5
s
I
B1
=I
B2
=6mA
f
T
90
MHz
V
CE
=12V, I
E
=1A
C
ob
100
pF
V
CB
=10V, f=1MHz
Specification
min
typ
max
SLA5023
I
C
=3A, I
B
=6mA
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
2mA
1.2mA
0.8mA
0.6mA
0.4mA
I
B
=4mA
I
C
(A)
V
CE
(V)
(V
CE
=4V)
20000
10000
5000
1000
500
100
50
30
0.03
0.1
0.5
1
5
h
FE
I
C
(A)
8
typ
0.05
20000
10000
5000
1000
500
100
50
30
0.03
0.1
0.5
1
5 8
T
a
=125
C
30
C
0.05
75
C
25
C
(V
CE
=4V)
h
FE
I
C
(A)
3
0.3
0.5
2
1
0
1
5
10
125
C
75
C
25
C
T
a
=30
C
(I
C
/ I
B
=1000)
V
CE
(sat) (V)
I
C
(A)
3
0.2
0.5
V
CE
(sat) (V)
I
B
(mA)
2
1
0
1
5 10
50 100
500
I
C
=1A
I
C
=3A
I
C
=5A
8
6
4
2
0
0
1
2
3
T
a
=125
C
30
C
75
C
25
C
(V
CE
=4V)
I
C
(A)
V
BE
(V)
10
5
5
1
0.5
0.1
0.05
0.03
100
50
10
3
Single Pulse
Without Heatsink
Ta=25
C
10ms
1ms
100
s
I
C
(A)
V
CE
(V)
20
10
5
1
0.5
1
5
10
50 100
500 1000
PW (mS)
ch-c
(
C / W)
Electrical characteristics (Source: PNP transistor)
25
30
35
40
20
15
10
5
0
0
50
100
150
T
a
(
C)
P
T
(W)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Without Heatsink
PDF 
ZIP