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Электронный компонент: TM1641P-L

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sAbsolute Maximum Ratings
sElectrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
Conduction angle 360
, Tc=103
C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125
C
400
TM1641P-L(L)
600
TM1661P-L(L)
A
A
V
A
W
W
C
C
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
16
160
10
2
5
0.5
40 to
+
125
40 to
+
125
V
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
V
mA
V
mA
C
/W
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
Rth
0.7
0.8
1.0
12
16
25
70
25
0.8
1.5
30
30
30
1.2
0.2
1.6
1.5
1.5
0.1
2.0
V
D
=
V
DRM
, R
GK
=
, Tj=125
C
V
D
=
V
DRM
, R
GK
=
, Tj=25
C
Pulse test, I
TM
=
20A
V
D
=
6V, R
L
=
10
, T
C
=
25
C
V
D
=
6V, R
L
=
10
, T
C
=
25
C
Junction to case
V
D
=
6V
V
D
=
1/2
V
DRM
, Tj=125
C
46
1.4
2
3
15.6
0.4
13.6
4.8
0.2
2.0
0.1
3.2
0.1
5.0
0.2
9.6
1.8
20.0 min
4.0 max
19.9
0.3
4.0
2.0
1.05
+
0.2
0.1
0.65
+
0.2
0.1
5.45
0.1
5.45
0.1
TM1641P-L(L), TM1661P-L(L)
TO-3P 16A Triac
s Features
q
Repetitive peak off-state voltage: V
DRM
=400, 600V
q
RMS on-state current: I
T(RMS)
=16A
q
Gate trigger current: I
GT
=30mA max (MODE , , )
External Dimensions
(Unit: mm)
Weight: Approx. 6.1g
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate (G)
a. Part Number
b. Lot Number
a
b
(1) (2) (3)
(Tj=25
C, unless otherwise specified)
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance