15.6
0.2
5.45
0.1
3.35
0.2
3.45
0.2
5.5
0.2
3.2
0.2
23
0.3
3.3
1.6
5.5
0.2
9.5
0.2
2.15
(16.2)
5.45
0.1
1.5 4.4 1.5
0.1
+
0.2
1.05
0.1
+
0.2
0.65
0.1
+
0.2
1.75
0.1
+
0.2
sAbsolute Maximum Ratings
sElectrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
Conduction angle 360
, Tc=92.5
C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125
C
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
400
TM1641B-L
600
TM1661B-L
A
A
V
A
W
W
C
C
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
16
160
10
2
5
0.5
40 to
+
125
40 to
+
125
Vrms
V
ISO
2000
V
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
V
mA
V
mA
C
/W
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
Rth
0.7
0.8
1.0
12
16
25
70
25
0.8
0.1
1.5
30
30
30
1.8
0.2
10
1.6
1.5
1.5
0.1
2.0
V
D
=
V
DRM
, R
GK
=
, Tj=125
C
V
D
=
V
DRM
, R
GK
=
, Tj=25
C
I
TM
=
20A, T
C
=
25
C
V
D
=
6V, R
L
=
10
, T
C
=
25
C
V
D
=
6V, R
L
=
10
, T
C
=
25
C
Junction to case
Tj=25
C
V/
s
(dv/dt)c
V
D
=
400V, Tj=125
C
V
D
=
1/2
V
DRM
, Tj=125
C
48
TM1641B-L, TM1661B-L
TO-3PF 16A Triac
s Features
q
Repetitive peak off-state voltage: V
DRM
=400, 600V
q
RMS on-state current: I
T(RMS)
=16A
q
Gate trigger current: I
GT
=30mA max (MODE , , )
q
Rate-of-rise of off-state commutation voltage: (dv/dt)c =10V/
s min.
q
Isolation voltage: V
ISO
=2000V (AC, 1min.)
q
UL approved type available
External Dimensions
(Unit: mm)
Weight: Approx. 6.5g
(1) (2) (3)
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate (G)
a. Part Number
b. Lot Number
a
b
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Rate-of-rise of off-state commutation voltage
Thermal resistance
0.4
0.1
1
100
10
0.8
1.2
2.0
2.4
1.6
2.8
On-state voltage
v
T
( V )
On-state current
i
T
(A)
v
T
i
T
Characteristics (max)
1
5
10
50
100
0
80
60
120
100
140
160
40
20
180
Number of cycle
Surge on-state current I
TSM
(A)
I
TSM
Ratings
0
4
8
12
16
0
8
12
16
4
20
RMS on-state current I
T(RMS)
(A)
Average on-state power P
T
( AV
)
(W
)
I
T(RMS)
P
T(AV)
Characteristics
0
4
8
12
16
20
0
50
75
100
25
150
125
RMS on-state current I
T(RMS)
(A)
Case temperature T
C
(
C)
I
T(RMS)
Tc Ratings
0
40 25
25
50
75
100
125
0.8
1.2
0.4
0
1.6
2.0
(V
D
=6V R
L
=10
)
Junction temperature Tj (
C)
Gate trigger voltage V
GT
(V)
10
1
100
1000
5000
0
1
10
50
Gate current
i
GF
(mA)
Gate voltage
v
GF
(V)
Gate Characteristics
Tj =125
C
Tj =25
C
V
GM
=10V
I
GM
=2
A
P
G(AV)
=0.5W
P
GM
=5W
V
GD
=0.2V
40
C V
GT
=1.8V
40
C I
GT
=75mA
25
C V
GT
=1.5V
25
C I
GT
=30mA
Mode
0
40 25
40 25
40 25
25
50
75
100
125
100
10
1
1000
Junction temperature Tj (
C)
Latching current I
L
(mA)
0
25
50
75
100
125
10
100
1
1000
(R
G-K
=1k
)
Junction temperature Tj (
C)
Holding current I
H
(mA)
0
25
50
75
100
125
5
10
1
50
100
(V
D
=6V R
L
=10
)
Junction temperature Tj (
C)
Gate trigger current IGT (mA)
10
5
10
4
10
3
10
2
10
1
5
1
0.5
t, Time (ms)
Transient thermal resistance
r
th (
j-c)
(
C/
W)
r
th( j-c)
t
Characteristics
Mode
Mode
(R
G-K
=
)
49
TM1641B-L, TM1661B-L
1cycle
10 ms
I
TSM
Tj=125
C
Initial junction temperature
Full-cycle sinewave
Conduction angle :360
Full-cycle sinewave
Conduction angle :360
V
GT
temperature characteristics
( Typical)
I
GT
temperature characteristics
( Typical)
I
H
temperature characteristics
( Typical)
I
L
temperature characteristics
( Typical)
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