sAbsolute Maximum Ratings
sElectrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
Conduction angle 360
, Tc=115
C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125
C
(Tj = 25
C, unless otherwise specified)
400
TM341M-L
600
TM361M-L
A
A
V
A
W
W
C
C
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
3.0
30
6
0.5
3
0.3
40 to
+
125
40 to
+
125
V
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
V
mA
V
mA
C/W
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
Rth
0.7
0.8
0.8
8
10
12
15
10
0.7
2.0
20
20
20
3.0
0.2
1.6
2.0
2.0
0.1
0.3
2.0
V
D
=
V
DRM
, R
GK
=
, Tj=125
C
V
D
=
V
DRM
, R
GK
=
, Tj=25
C
Pulse test, I
TM
=
5A
V
D
=
6V, R
L
=
10
, T
C
=
25
C
V
D
=
6V, R
L
=
10
, T
C
=
25
C
Junction to case
V
D
=
6V
V
D
=
1/2
V
DRM
, Tj=125
C
s Features
q
Repetitive peak off-state voltage: V
DRM
=400, 600V
q
RMS on-state current: I
T(RMS)
=3A
q
Gate trigger Current: I
GT
=20mA max (MODE , , )
28
TM341M-L, TM361M-L
TO-220 3A Triac
1.7
0.2
3.0
0.2
8.8
0.2
3.75
0.1
1.35
0.15
2.5
0.1
2.5
0.1
+
0.2
0.1
0.65
10.4max
16.7max
5.0max
2.1max
12.0
min
4.0
max
Weight: Approx. 2.6g
External Dimensions
(Unit: mm)
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate (G)
(1) (2) (3)
a. Part Number
b. Lot Number
a
b
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
20
10
0
30
40
Number of cycle
Surge on-state current I
TSM
(A)
I
TSM
Ratings
1
5
10
50
100
0
2
4
6
8
10
12
Gate current
i
GF
(A)
Gate voltage
v
GF
(V)
Gate Characteristics
0
0.5
1.0
1.5
1cycle
10 ms
I
TSM
0.5
1
5
10
50
100
1.0
2.0
3.5
3.0
On-state voltage
v
T
( V )
On-state current
i
T
(A)
v
T
i
T
Characteristics (max)
50Hz
0
0
2
4
20
40
60
0
0
1
2
5
3
4
1
2
3
4
5
RMS on-state current I
T(RMS)
(A)
I
T(RMS)
P
T(AV)
Characteristics
0
0
25
50
100
75
150
125
1
2
3
4
5
RMS on-state current I
T(RMS)
(A)
I
T(RMS)
Tc Ratings
40
0
75
100
25
50
125
0
10
5
Junction temperature Tj (
C)
Holding current I
H
(mA)
(
V
D
=30V, I
P
=3.0A, R
GK
=
)
v
gt
t
w
50%
t
w
50%
i
gt
0.5 1
10
10
2
10
3
Pulse width
t
w (
s)
0.1
1
30
10
0.1
1
30
10
Pulse trigger temperature Characteristics
i
gt
(Typical)
10
4
0.5 1
10
10
2
10
3
Pulse width
t
w (
s)
10
4
0.1
1
30
10
0.5 1
10
10
2
10
3
Pulse width
t
w (
s)
10
4
0.5 1
10
10
2
10
3
Pulse width
t
w (
s)
0.1
1
30
10
10
4
(MODE )
(MODE )
(MODE )
(MODE )
(MODE )
(MODE )
0.5 1
10
10
2
10
3
Pulse width
t
w (
s)
0.1
1
30
10
10
4
0.5 1
10
10
2
10
3
Pulse width
t
w (
s)
0.1
1
30
10
10
4
0.1
1
10
10
2
10
3
t, Time (ms)
0.1
1
100
10
Transient thermal resistance
r
th
(
C/
W
)
10
4
10
5
40
0
75
100
25
50
125
0
1.0
0.8
0.6
0.4
0.2
1.2
Junction temperature Tj (
C)
Gate trigger voltage V
GT
(V)
V
GT
temperature characteristics
( Typical)
I
GT
temperature characteristics
( Typical)
40
0
75
100
25
50
125
0
24
10
20
Junction temperature Tj (
C)
Gate trigger current I
GT
(mA)
Case temperature T
C
(
C)
Average on-state power P
T
( AV
)
(W
)
MODE ( T
2
+
,G
+
)
MODE ( T
2
+
,G
)
MODE ( T
2
,G
)
Tj=25
C
Tj=125
C
0
0
25
50
100
75
150
125
1.0
1.5
0.5
2.0
2.5
3.0
RMS on-state current I
T(RMS)
(A)
I
T(RMS)
Ta Ratings
Ambient temperature T
a
(
C)
29
(V
D
=6V, R
L
=10
)
(V
D
=6V, R
L
=10
)
TM341M-L, TM361M-L
Tj=125
C
Initial junction temperature
See graph at the upper right
Gate trigger current
I
GT
(mA)
Gate trigger voltage V
GT
(V)
Tj
=
40
C
Tj
=25
C
Tj
=
20
C
Full-cycle sinewave
Conduction angle
=
1
+
2
= 360
1
2
Full-cycle sinewave
Conduction angle
=
1
+
2
= 360
1
2
Full-cycle sinewave
Conduction angle : 360
Self-supporting
Natural cooling
No wind
I
H
temperature Characteristics
(Typical)
(T
2
+
T
1
)
( T
2
T
1
+
)
Pulse trigger temperature Characteristics
v
gt
( Typical)
v
gt
V
GT
DC gate trigger
voltage at 25
C
( )
( )
Gate trigger voltage
at Tj and
t
w
v
gt
V
GT
DC gate trigger
voltage at 25
C
( )
( )
Gate trigger voltage
at Tj and
t
w
v
gt
V
GT
DC gate trigger
voltage at 25
C
( )
( )
Gate trigger voltage
at Tj and
t
w
Tj= 40
C
20
C
25
C
75
C
125
C
v
gt
t
w
50%
Tj= 40
C
20
C
25
C
75
C
125
C
v
gt
t
w
50%
Tj= 40
C
20
C
25
C
75
C
125
C
i
gt
I
GT
DC gate trigger
current at 25
C
( )
( )
Gate trigger current
at Tj and
t
w
i
gt
I
GT
DC gate trigger
current at 25
C
( )
( )
Gate trigger current
at Tj and
t
w
i
gt
I
GT
DC gate trigger
current at 25
C
( )
( )
Gate trigger current
at Tj and
t
w
t
w
50%
i
gt
t
w
50%
i
gt
Tj= 40
C
20
C
25
C
75
C
125
C
Tj= 40
C
20
C
25
C
75
C
125
C
Tj= 40
C
20
C
25
C
75
C
125
C
MODE ( T
2
+
,G
+
)
MODE ( T
2
+
,G
)
MODE ( T
2
,G
)
Transient thermal resistance
Characteristics
Junction to
case
junction to
operating
environment
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