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Электронный компонент: TM883S-L

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sAbsolute Maximum Ratings
sElectrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
Conduction angle= 360
, Tc=91
C
R
GK
=
, Tj= 40 to +125
C
50Hz full-cycle sine wave, Peak value, Non-repetitive, Tj=125
C
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
800
A
A
V
A
W
W
C
C
Vrms
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
8.0
80
10
2
5
0.5
40 to
+
125
40 to
+
125
1500
V
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
+
, G
+
T
2
+
, G
T
2
, G
V
mA
V
mA
V/
s
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
(dv/dt)c
0.7
0.8
7
13
11
25
1.4
2.0
30
30
30
0.2
10
1.6
2.0
2.0
0.1
2.0
V
D
=V
DRM
, R
GK
=
, Tj=125
C
V
D
=V
DRM
, R
GK
=
, Tj=25
C
I
TM
=10A, Tc=25
C
V
D
=6V, R
L
=10
, Tc=25
C
V
D
=6V, R
L
=10
, Tc=25
C
V
D
=400V, (di/dt)c = 4A/ms, Tj=125
C, I
T
=1A
Tj=25
C
V
D
=1/2
V
DRM
, Tj=125
C
C/W
Rth
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Rising rate of off-state voltage in commutating
Thermal resistance
3.6
Junction to Case
34
TM883S-L
TO-220F 8A Triac
s Features
q
Repetitive peak off-state voltage: V
DRM
=800V
q
RMS on-state current: I
T(RMS)
=8A
q
Gate trigger current: I
GT
=30mA max (MODE , , )
q
Isolation voltage: V
ISO
=1500V (50Hz Sine wave, RMS )
16.9
0.3
8.4
0.2
0.8
0.2
3.9
0.2
4.0
0.2
10.0
0.2
4.2
0.2
1.35
0.15
1.35
0.15
2.4
0.2
2.2
0.2
3.3
0.2
0.85
+
0.2
0.1
+
0.2
0.1
C 0.5
2.8
13.0
min
2.54
2.54
0.45
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1) (2) (3)
a
b
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate (G)
a. Part Number
b. Lot Number
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power dissipation
Average gate power dissipation
Junction temperature
Storage temperature
Isolation voltage
(
Tj=25
C, unless otherwise specified)
f 50Hz, duty 10%
f 50Hz, duty 10%