50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
AK55HB120/160
THYRISTOR MODULE
UL;E76102
M
93.5max
26max
13
80
16.5
23
23
3-M5
110TAB
2-6.5
3
2
1
30max
21
K1
G1
K2
G2
Unit
A
Symbol
Item
Conditions
Ratings
55
Unit
I
T
AV
Average On-State Current
I
T
RMS
R.M.S. On-State Current
Single phase, half wave, 180
conduction, Tc85
Tc
85
I
TSM
Surge On-State Current
I
2
t
I
2
t
P
GM
Peak Gate Power Dissipation
P
G
AV
Average Gate Power Dissipation
I
FGM
Peak Gate Current
V
FGM
Peak Gate Voltage
Forwad
1
2
cycle, 50Hz/60Hz, peak value, non-reqetitive
Value for one cycle of surge current
A
122
A
1000/1100
A
5000
10
A
2
S
W
3
V
RGM
Peak Gate Voltage
Reverse
di/dt
Critical Rate of Rise of On-State Current
I
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt0.1A/s
V
ISO
Isolation Breakdown Voltage
R.M.S.
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Mounting
Torque
Mass
Mounting
M6
Terminal
M5
A.C. 1 minute
Recommended Value 2.5-3.9
25-40
Recommended Value 1.5-2.5
15-25
Typical Value
3
W
A
10
V
5
V
150
A/
s
2500
V
-40 to 125
-40 to 125
4.7
48
2.7
28
170
N
fB
g
Symbol
Item
Conditions
Ratings
20
Unit
I
DRM
Repetitive Peak Off-State Current, max.
at V
DRM
, Single phase, half wave, Tj
125
V
TM
Peak On-State Voltage max.
I
GT
/V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv/dt
Critical Rate of Rise of Off-State Voltage, min.
I
H
Holding Current, typ.
On-State Current 165A, Tj
125Inst. measurement
Tj
25I
T
1AV
D
6V
mA
1.50
V
100/2
Tj
125V
D
1
2
V
DRM
I
T
55AI
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt0.1A/s
0.25
mA/V
V
10
Tj
125V
D
2
3
V
DRM
Exponential wave.
Tj
25
I
L
Lutching Current, typ.
Rth
j-c Thermal Impedance, max.
Tj
25
Junction to case, per
1
2
Module
500
s
V/
s
50
mA
100
mA
0.50
Junction to case, per 1 Module
0.25
/W
Electrical Characteristics
Symbol
Item
AK55HB120
Ratings
AK55HB160
Unit
1200
1600
V
V
DRM
Repetitive Peak Off-State Voltage
K1
A2K1
A1K2
G1
K2
G2
1
2
3
Power ThyristorModule AK55HB series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1600V are available, and electrically isolated mounting base make
your mechanical design easy.
Isolated mounting base
I
T
AV
55A, I
T
RMS
122A, I
TSM
1100A
di/dt 150 A/
s
dv/dt 500V/
s
Applications
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
Maximum Ratings
Tj25 unless otherwise specified
SanRex
AK55HB120/160
;;
;;
Gate Characteristics
Gate CurrentmA
Gate Voltage
V
Peak Forward Gate Voltag10V
Pe
ak G
ate
Po
we
r1
0W
Ave
ra
ge G
ate
P
ow
er3
W
Peak Gate Current
3
A
Maximum Gate Voltage that will not trigger any unit0.25V
125
25
-30
On-State Voltage max
On-State VoltageV
On-State Current
A
Tj125
: Conduction Angle
360
2
Average On-State Current Vs Power Dissipation
Single phase half wave
Average On-State CurrentA
Power Dissipation
W
Per one element
30
60
120
180
90
D.C.
: Conduction Angle
360
2
Average On-State Current Vs Maximum Allowable
Case TemperatureSingle phase half wave
Average On-State CurrentA
Allowable Case Temperature
D.C.
30
60
90
120
180
Per one element
Surge On-State Current Rating
Non-Repetitive
Timecycles
Surge On-State Current
A
Per one element
60Hz
50Hz
Tj25 start
Time
t
sec
Transient Thermal Impedance
Transient Thermal Impedance
j-c
/
W
Per one element
Junction to Case
Output Current
WBidirectional connection
Ambient Temperature
Output CurrentA
Total Power Dissipation
W
Allowable Case Temperature
Conduction Angle 180
ld(Ar.m.s)
W3
W1
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
IdRMS
IdAr.m.s.
RMS On-State CurrentA
Ambient Temperature
Three phase
bidiretional connection
RMS On-State Current Vs
Allowable Case Temperature
Allowable Case Temperature
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
30
60
90
120
180
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