75
DD(KD)100GB40/80
DIODE MODULE
Symbol
Item
Ratings
DD100GB40
400
480
Unit
V
RRM
V
RSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD100GB80
800
960
V
V
Unit
a
Symbol
Item
Average Forward Current
Conditions
Ratings
Unit
A
I
F AV
Single phase, half wave, 180 conduction, Tc 115
100
I
F (RMS)
R.M.S. Forward Current
Single phase, half wave, 180 conduction, Tc 115
155
A
I
FSM
Surge Forward Current
1
2
cycle, 50/60H
Z
, peak value, non-repetitive
1800/2000
A
I
2
t
I
2
t
Value for one cycle of surge current
16500
A
2
S
Tj
Junction Temperature
40
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Breakdown Voltage R.M.S.
Mounting
Torque
A.C.1minute
2500
V
Mounting M6
Terminal M5
Mass
Recommended Value 2.5
3.9
25
40
Recommended Value 1.5
2.5
15
25
4.7
48)
2.7
28)
N m
f B
g
170
Electrical Characteristics
Symbol
I
RRM
Item
Repetitive Peak Reverse Current, max.
Conditions
at V
DRM
, single phase, half wave. Tj
150
Ratings
30
1.25
0.30
Unit
mA
V
FM
Forward Voltage Drop, max.
Foward current 320A Tj 25
Inst. measurement
V
Rth j-c
Thermal Impedance, max.
Junction to case
/W
Power Diode Module DD100GB series are designed for various rectifier circuits.
DD100GB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102 M
Maximum Ratings
Tj
25
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