SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
FBA50CA45/50
MOSFET MODULE
UL;E76102
M
FBA50CA45/50 is a dual power MOSFET module designed for fast swiching
applications of high voltage and current.
2 devices are serial connected. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
I
D
50A, V
DSS
500V
Suitable for high speed switching applications.
Low ON resistance.
Wide Safe Operating Areas.
Applications
UPS
CVCF
, Motor Control, Switching Power Supply, etc.
107.5
0.6
19
1
4
3
2
19
19
NAME PLATE
2
-
6.5
93
0.3
35
0.6
31max
30max
4
-
M5
8
4
17
4
7
6
5
TAB
=
110
T0.5
Unit
A
Maximum Ratings
Tj25 unless otherwise specified
Electrical Characteristics
Tj25 unless otherwise specified
Symbol
Item
Conditions
Ratings
FBA50CA45 FBA50CA50
Unit
V
DSS
Drain-Source Voltage
450
500
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain
Current
D.C.
Pulse
50
A
I
DP
100
-I
D
Source Current
50
A
P
T
Total Power Dissipation
Tc
25
320
W
Tj
Channel Temperature
150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage
R.M.S.
A.C. 1minute
2500
V
Mounting
Torque
Mounting
M6
Terminal
M5
Recommended Value 2.5-3.9
25-40
4.7
48
N
m
kgfB
Recommended Value 1.5-2.5
15-25
2.7
28
Mass
Typical Value
220
g
Symbol
Item
Conditions
Ratings
Min.
Typ.
Max.
1.0
Unit
I
GSS
Gate Leakage Current
V
GS
20VV
DS
0V
A
1.0
I
DSS
Zero Gate Voltage Drain Current
V
GS
0VV
DS
500V
mA
450
V
BR
DSS
Drain-Source
Breakdown Voltage
FBA50CA45
FBA50CA50
V
GS
0VI
D
1mA
V
500
1.0
5.0
V
GS
th
Gate-Source Threshold Voltage
V
DS
V
GS
I
D
10mA
V
120
R
DS
on
Drain-Source On-State Resistance
I
D
25AV
GS
15V
m
3.0
V
DS
on
Drain-Source On-State Voltage
I
D
25AV
GS
15V
V
30
gfs
Forward Transconductance
V
DS
10VI
D
25A
S
10000
Ciss
Input Capacitance
V
GS
0VV
DS
25Vf1.0MHz
pF
1900
Coss
Output Capacitance
V
GS
0VV
DS
25Vf1.0MHz
pF
750
Crss
Reverse Transfer Capacitance
V
GS
0VV
DS
25Vf1.0MHz
pF
60
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
R
L
12R
GS
50V
GS
15V
I
D
25AR
G
5
ns
60
td
on
650
tf
130
td
off
1.5
V
SDS
Diode Forward Voltage
I
D
25AV
GS
0V
V
700
trr
Reverse Recovery Time
I
D
25AV
GS
0Vdi/dt100A/s
ns
0.39
Rth
j-c Thermal Resistance
/W
q
D2 S1
D1
G2
S2
S1
G1
S2
S1
i
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50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
FBA50CA45/50
V
GS
4V
Tj
25
Pulse Test
15V 10V
8V
6V
5V
Output CharacteristicsTypical
Drain Current I
D
A
Drain-Source Voltage V
V
V
DS
10V
Tj
25
Pulse Test
Forward Transfer CharacteristicsTypical
0
Drain Current I
D
A
Gate-Source Voltage V
V
V
DS
25V
Tj
25
Pulse Test
Forward Transconductance Vs.
Drain Current
0
Drain Current
A
Forward Transconductance
S
Tj
25
Tj
-25
Tj
100
V
GS
10V
Pulse Test
Typical
Drain-Source On-State Resistance
Drain Current
A
Drain-Source On-State Resistance Vs.
Drain Current
Ciss
V
GS
0V
f
1MHz
Tj
25
Coss
Crss
Input Capacitance, Output Capacitance,
Reverse Transfer CapacitanceTypical
Capacitance
Drain-Source Voltage V
V
Pw
10
s
100
s
1ms
10ms
D.C.
FBA50CA45
FBA50CA50
Tj
25
Non-Repetitive
2
5
5
0
1
Drain Current I
D
A
Drain-Source Voltage V
V
Safe Operating Area
SanRex
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
FBA50CA45/50
V
GS
0V
Tj
25
Typical
Pulse Test
Forward Voltage of Free Wheeling Diode
Source Current I
S
A
Source-Drain VoltageV
V
Max.
Transient Thermal Impedance
Thermal Impedance
-
/
-
-
Max.
Time
sec
D
0.5
0.2
0.1
0.05
0.02
0.01
0
Normalized Transient Thermal Impedanse
Vs. Pulse Width
Pulse Width P
sec
Normalized Transient Thermal Impedanse
/
SanRex
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