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Электронный компонент: FSD20A30

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50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
FSD20A30/60
THYRISTOR MODULE
SINGLE PHASE BRIDGE TYPE
UL:E76102
M
33.0
22.5max
11.6
2.6
5.2
22.1
0.5
14.6
0.3
26.10.5
48.0
5.26.2
250TABt0.8
62.0
AC1
AC2
G2
G1
-
Unit
A
Symbol
Item
Conditions
Ratings
20
Unit
IT
(AV)
Average On-State Current
I
TSM
Surge On-State Current
Single phase, half wave, 180
conduction, Tc65
1
2
cycle, 50Hz/60Hz, peak value, non-repetitive
I
2
t
I
2
t
P
GM
Peak Gate Power Dissipation
P
G
AV
Average Gate Power Dissipation
I
FGM
Peak Gate Current
V
FGM
Peak Gate Voltage (Forward)
V
RGM
Peak Gate Voltage (Reverse)
A
180/200
A
165
A
2
S
10
1
W
W
3
di
dt
Critical Rate of On-State Current
I
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt1A/s
V
ISO
Isolation Breakdown Voltage (R.M.S.)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Mounting Torque
M5
Mass
A.C.1minute
Recommended Value 1.5-2.5
15-25
10
A
V
5
V
100
A/
s
2500
V
-30 to 125
-30 to 125
2.7
28
66
N
fB
g
Symbol
Item
Conditions
Ratings
5
Unit
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
Repetitive Peak Reverse Current, max.
at V
DRM
, single phase, half wave, Tj
125
at V
DRM
, single phase, half wave, Tj
125
V
TM
Peak On-State Voltage, max.
I
GT
V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv
dt
Critical Rate of Rise of Off-State Voltage, min.
I
H
Holding Current, typ.
On-State Current 30A, Tj
25 Inst. measurement
Tj
25I
T
1AV
D
6V
mA
5
mA
1.5
V
40/1.2
Tj
125V
D
1
2
V
DRM
I
T
10AI
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt1A/s
0.2
mA/V
V
10
Tj
125, V
D
2
3
V
DRM
, Exponential wave.
Tj
25
Rth
j-c Thermal Impedance, max.
Junction to case
50
s
V/
s
30
mA
1.0
/W
Electrical Characteristics
Symbol
Item
FSD20A30
Ratings
FSD20A60
Unit
V
RRM
Repetitive Peak Reverse Voltage
300
600
V
300
600
V
V
DRM
Repetitive Peak Off-State Voltage
AC1
G1
G2
+
-
AC2
FSD20A is a single phase bridge module consist of thyristors and diodes
I
D
=20A, V
RRM
=600V
Easy Construction
Highly reliable glass passivated chips
Applications
Rectification (Bridge)
Motor Drive
Maximum Ratings
Tj25 unless otherwise specified
SanRex
FSD20A30/60
;
;
;
Gate Characteristics
Gate CurrentmA
-
Gate Voltage
V
Tj125
Peak Forward Gate Voltag10V
Peak Gate Current
3
A
Peak G
ate
Pow
er(10W
)
Average G
ate P
ow
er1
W
Maximum Gate Voltage that will not trigger any unit
25
-30
On-State Voltage max
On-State VoltageV
00
0
Average On-State Current
A
Tj125
Output Current Current Vs
Total Power Dissipation
Output CurrentA
7
Total Power Dissipation
W
30
60
120
180
90
Conduction Angle
2
Output Current Vs Maximum Allowable
Case Temperature Single phase full bridge
Output CurrentA
Allowable Case Temperature
3060
120
180
90
Conduction Angle
2
Surge On-State Current Rating
Non-Repetitive
Timecycles
Surge On-State Current
A
Tj25
60Hz
50Hz
Per one element
Ambient Temperature Vs Total Power
Dissipation
7
Ambient Temperature
Total Power Dissipation
W
0.4
Rth
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Conduction Angle
10
1
Total Power Dissipation
W
Average Forward CurrentA
Free Wheeling Diode Average On-State Current
Vs Power DissipationPulse Waving form
30
60
120
180
90
Conduction Angle
Average Forward CurrentA
Allowable Case Temperature
Free Wheeling Diode Averge On-State Current Vs
Maximum Allowable Case TemperaturePulse Waving form
3060
120180
90