1
GCA75BA60
IGBT MODULE
SanRex IGBT Module GCA75BA60 is designed for high speed, high current switching
applications. This Module is electrically isolated and contains two IGBTs connected in
series with a fast switching, soft recovery diode (trr=0.1
s) reverse connected across
each IGBT.
I
C
75A V
CES
600V
V
CE
sat
2.4V Typ
t f
0.10s Typ
Soft recovery diode
Applications
Inverter for motor control (VVVF)
UPS, AC servo
DC power supply, Welder
q
C2 E1
C1
G2
E2
E1
G1
E2
e
u
y
t
r
w
Maximum Ratings
Tj25 unless otherwise specified
Symbol
Item
V
CES
Collector-Emitter Voltage
Conditions
with gate terminal shorted to emitter
Ratings
GCA75BA60
Unit
V
600
V
GES
Gate-Emitter Voltage
with collector shorted to emitter
V
20
Ic
Collector
Current
DC
Pulse
ms
A
75
I
CP
150
-Ic
Reverse Collector Current
A
75
Pc
Total Power Dissipation
Tc
25
W
315
Tj
Junction Temperature
150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage
R.M.S.
A.C.
minute
V
2500
Mounting
Torque
Mounting
6
Terminal
5
Recommended Value 2.5
-3.925-40
N
m
kgfcm
4.7
48
Recommended Value 1.5
-2.515-25
2.7
28
Mass
Typical Value
g
210
Electrical Characteristics
Tj25 unless otherwise specified
Symbol
Item
I
GES
Gate Leakage Current
Conditions
V
GE
20VV
CE
0V
Ratings
Min.
Typ.
Max.
Unit
nA
500
I
CES
Collector Cut-Off Current
V
CE
600VV
GE
0V
mA
1.0
0
V
BR
CES
Collector-Emitter Breakdown Voltage
V
GE
0VIcmA
V
600
V
GE
th
Gate Threshold Voltage
V
CE
10VIc7.5mA
V
3.0
2.4
0
7.0
0
V
CE
sat
Collector-Emitter Saturation Voltage
Ic
75AV
GE
15V
V
4
.00
2.8
0
Cies
Input Capacitance
V
CE
10VV
GE
0Vf1MHz
nF
0.10
7.5
0
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Ic
75AV
GE
15V/-5V
Vcc
300VR
G
8
s
0.20
0.20
td
on
0.10
0.40
tf
Emitter-Collector Voltage
0.40
0.20
td
off
1.80
0.80
V
ECS
-Ic75AV
GE
0V
V
0.1
0
2.80
trr
Reverse Recovery Time
-Ic75AV
GE
-10Vdi / dt150A/s
s
0.15
Rth
j-c Thermal Resistance
IGBT-Case
/W
0.40
Diode-Case
0.55
94.5MAX
3-M5depth12mm
12
2
45
67
2- 6.5
NAME PLATE
32MAX
31MAX
18
4
4
19
17.5
TAB#110
0.5tfit
230.3
230.3
800.3
180.3
3
1
40.6
17
0.
6
35.5MAX
40.6
Unit
mm
UL;E76102
M
2
GCA75BA60
V
GE
=
Tj=
Pulse Test
Output CharacteristicsTypical
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Tj=
Tj=
V
CE
=
V
Pulse Test
Forward Transfer CharacteristicsTypical
Gate-Emitter Voltage V
GE
V
Collector Current Ic
A
Tj=
Tj=
V
GE
=
V
Pulse Test
Saturation Voltage CharacteristicsTypical
Collector Current IcA
Collector-Emitter Voltage V
V
IC=A
IC=
A
IC=A
Tj=
Pulse Test
Gate-Emitter Voltage V
GE
V
Collector-Emitter Saturation Voltage
CharacteristicsTypical
Collector-Emitter Voltage V
V
Tj=
Tj=
Pulse Test
Forward Voltage of
Free Wheeling DiodeTypical
Emitter-Collector Voltage V
ECS
V
Reverse Collector Current -Ic
A
Cies
Coes
Cres
V
GE
=V
f=1MH
Z
Tj=
Collector-Emitter Voltage V
CE
V
Input Capacitance, Output Capacitance,
Reverse Transfer CapacitanceTypical
Capacitance
p
3
GCA75BA60
Tj=
Vcc=V
Gate Charge vs. Gate-Emitter VoltageTypical
Gate Charge Q
G
nC
Gate-Emitter Voltage V
GE
V
Tj=
R
G
=
V
CC
=
GE
/-V
GE
=
/-
td
on
t r
td
off
t f
Collector Current IcA
Switching CharacteristicsTypical
Switching Time tr,td
o
n
, tf,td
off
n
s
Max.
Junction to Case
Time
t
sec
-
-
-
-
-
-
Transient Thermal ImpedanceIGBT
-
-
-
-
Transient Thermal Impedance
-
/
Max.
Junction to Case
Time
t
sec
-
-
-
-
-
-
-
-
-
-
Transient Thermal Impedance
-
/
Transient Thermal ImpedanceFWD
I r r
Tj=
V
GE
= -V
- d i / d t = A / S
t r r
Reverse Collector Current -IcA
Reverse Recovery Characteristics of Free-Wheel DiodeTypical
Reverse Recovery Current
A
Reverse Recovery Time t
n
s
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