2SB1664
No.0000-1/3
Driver Applications
Applications
Motor drivers, printer hammer drivers, relay drivers,
voltage regulator control.
Features
High DC current gain.
Large current capacity and wide ASO.
Low saturation voltage.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--110
V
Collector-to-Emitter Voltage
VCEO
--100
V
Emitter-to-Base Voltage
VEBO
--6
V
Collector Current
IC
--8
A
Collector Current (Pulse)
ICP
--12
A
Collector Dissipation
PC
Tc=25
C
35
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--80V, IE=0
--0.1
mA
Emitter Cutoff Current
IEBO
VEB=--5V, IC=0
--3.0
mA
DC Current Gain
hFE
VCE=--3V, IC=--4A
1500
4000
Gain-Bandwidth Product
fT
VCE=--5V, IC=--4A
20
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--4A, IB=--8mA
--1.0
--1.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--4A, IB=--8mA
--2.0
V
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN*0000
2SB1664
Package Dimensions
unit : mm
0000
[2SB1664]
41001 TS IM SAWADA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
Preliminary
1 : Base
2 : Emitter
3 : Collector
SANYO : ZP
6.2
7.8
8.2
0.2
0.4
4.2
1.0
1.0
5.08
2.54
2.54
8.4 10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1
2
3
2SB1664
No.0000-2/3
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--5mA, IE=0
--110
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--50mA, RBE=
--100
V
Turn-ON Time
ton
See specified test circuit.
0.7
s
Storage Time
tstg
See specified test circuit.
1.4
s
Fall Time
tf
See specified test circuit.
1.5
s
Switching Time Test Circuit
Electrical Connection
0
IC -- VCE
IT03423
IT03425
IT03424
IT03426
0
--10
--8
--6
--4
--2
--1
--2
--3
--4
--5
0
IC -- VBE
--8
--6
--4
--2
--0.4
--0.8
--1.2
--1.6
--2.0
0
IC -- VCE
0
--6
--4
--2
--1
--2
--3
--4
--5
2
hFE -- IC
--0.1
7
10000
2
3
5
2
1000
7
5
3
2
3
5
7
--1.0
--10
2
3
5
7
--2mA
--4mA
--6mA
--8mA
IB=0
IB=0
--200
s
--400
s
--600
s
--800
s
--1000
s
--2000
s
--1200
s
--1400
s
--1600
s
--1800
s
VCE= --3V
Ta=120
C
25
C
--40
C
Ta=120
C
25
C
--40
C
Collector-to-Emitter Voltage, VCE -- V
Collecotr Current, I
C
-
-
A
Collector-to-Emitter Voltage, VCE -- V
Collecotr Current, I
C
-
-
A
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
A
Collector Current, IC -- A
From top
--18mA
--16mA
--14mA
--12mA
--10mA
DC Current Gain, h
FE
200
6k
B
C
E
VBE= --5V
VCC=50V
INPUT
OUTPUT
100
F
470
F
50
12.5
RB
RL
VR
PW=50
s, Duty Cycle
1%
500IB1= --500IB2=IC=4mA
TUT
+
+
2SB1664
No.0000-3/3
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2001. Specifications and information herein are subject
to change without notice.
PS
IT03427
IT03429
IT03428
IT03430
3
VCE(sat) -- IC
--0.1
--10
5
7
3
2
--1.0
7
5
2
3
5
7
--1.0
2
3
5
7
--10
2
A S O
2
2
3
5
7
--1.0
2
3
5
7
--10
2
--0.1
7
5
3
3
5
7
--10
2
3
5
7
2
--100
7
VBE(sat) -- IC
--0.1
3
2
--1.0
2
3
5
7
--1.0
2
3
5
7
--10
0
PC -- Tc
0
32
35
36
24
28
20
16
12
8
4
20
40
60
80
100
120
140
160
IC / IB=500
Ta= --40
C
25
C
25
C
120
C
120
C
IC / IB=500
Ta= --40
C
Tc=25
C
IC
1ms
10ms
ICP
DC Operation
100ms
1ms to 100ms : Single pulse
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Case Temperature, Tc --
C
Collector Dissipation, P
C
-
-
W
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector Current, IC -- A
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
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