2SK3666
No.8158-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8158A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2805GM IM MS TB-00001984 / 31505GB TS IM TA-100303
2SK3666
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
Applicatins
Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Features
Small IGSS.
Small Ciss
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
30
V
Gate-to-Drain Voltage
VGDS
--30
V
Gate Current
IG
10
mA
Drain Current
ID
10
mA
Allowable Power Dissipation
PD
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10
A, VDS=0V
--30
V
Gate-to-Source Leakage Current
IGSS
VGS=--20V, VDS=0V
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1
A
--0.18
--0.95
--2.2
V
Drain Current
IDSS
VDS=10V, VGS=0V
0.6*
6.0*
mA
Forward Transfer Admittance
yfs
VDS=10V, VGS=0V, f=1kHz
3.0
6.5
mS
Input Capacitance
Ciss
VDS=10V, VGS=0V, f=1MHz
4
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V, f=1MHz
1.1
pF
Static Drain-to-Source On-State Resistance
RDS(on)
VDS=10mV, VGS=0V
200
*
: The 2SK3666 is classified by IDSS as follows : (unit : mA).
Rank
2
3
4
IDSS
0.6 to 1.5
1.2 to 3.0
2.5 to 6.0
Marking : JK
2SK3666
No.8158-2/4
Package Dimensions
unit : mm
7013A-011
ITR00633
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
mA
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
VGS=0V
--0.1V
--0.2V
--0.3V
--0.4V
VGS=0V
--0.1V
--0.2V
--0.3V
--0.4V
ITR00635
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
mA
--1.50
--1.25
--1.00
--0.75
--0.50
--0.25
0
0
2
4
6
8
I DSS
=5.0mA
3.0mA
1.0mA
ITR00634
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
mA
0
5
10
15
20
25
30
0
1
2
3
4
5
ITR00636
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
mA
--1.0
--1.2
--0.8
--0.6
--0.4
--0.2
0
0
1
2
3
4
5
VDS=10V
VDS=10V
Ta=-
-25
C
25
C
75
C
1 : Source
2 : Drain
3 : Gate
SANYO : CP
1
2
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95
0.4
0.1
0.5
0.5
2SK3666
No.8158-3/4
0
20
40
60
80
100
120
140
160
0
40
80
200
120
160
240
Ambient Temperature, Ta --
C
PD -- Ta
Allowable Power Dissipation, P
D
-
-
mW
ITR00646
VGS=0V
f=1MHz
1.0
2
3
5
7
7
10
2
3
5
7
1.0
2
2
7
5
3
5
3
10
Drain-to-Source Voltage, VDS -- V
Ciss -- VDS
Input Capacitance, Ciss
-
-
pF
ITR00641
VGS=0V
f=1MHz
1.0
2
3
5
7
7
10
2
3
5
7
1.0
2
2
7
5
3
7
5
3
10
Drain-to-Source Voltage, VDS -- V
Crss -- VDS
Output Capacitance, Crss
-
-
pF
ITR00642
G
S
D
ID
IGDL
DC
DC
I DSS
=1.0mA
5.0mA
3.0mA
Cutof
f V
oltage,
V
GS
(of
f)
--
V
ITR00637
VGS(off) -- IDSS
Drain Current, IDSS -- mA
5
7
1.0
2
3
5
7
10
2
7
--1.0
5
3
5
3
2
2
VDS=10V
ID=1.0
A
ITR00638
Drain Current, ID -- mA
VDS=10V
f=1kHz
Forward T
ransfer
Admittance,
y
fs
-
-
mS
0.1
5
3
2
7
5
3
2
1.0
3
2
7
10
5
3
2
2
1.0
7
10
7
5
3
2
y
fs
-- ID
ITR00639
Drain Current, IDSS -- mA
VDS=10V
VGS=0V
f=1kHz
Forward T
ransfer
Admittance,
y
fs
-
-
mS
5
3
2
7
5
1.0
2
7
10
5
3
2
3
2
10
1.0
7
y
fs
-- IDSS
0
5
10
15
20
25
1p
5
3
3
3
3
3
10p
100p
10n
1n
100n
Drain-to-Source Voltage, VDS -- V
IGDL -- VDS
Gate-to-Drain Leak Current, I
GDL
--
A
ITR00640
ID=1mA
2SK3666
No.8158-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2005. Specifications and information herein are subject
to change without notice.
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