5HP01N
No.6642-1/4
Ultrahigh-Speed Switching Applications
P-Channel Silicon MOSFET
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--50
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
--0.07
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
--0.28
A
Allowable Power Dissipation
PD
0.4
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--50
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--50V, VGS=0
--10
A
Gate-to-Sourse Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--100
A
--1
--2.5
V
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6642
5HP01N
Package Dimensions
unit : mm
2178
[5HP01N]
72600 TS IM TA-1974
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Source
2 : Drain
3 : Gate
SANYO : NP
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
1
2
3
5HP01N
No.6642-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Transfer Admittance
yfs
VDS=--10V, ID=--40mA
50
70
mS
RDS(on)1
ID=--40mA, VGS=--10V
17
22
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--20mA, VGS=--4V
23
32
Input Capacitance
Ciss
VDS=--10V, f=1MHz
6.2
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
4.0
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
1.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
13
ns
Rise Time
tr
See specified Test Circuit
10
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
100
ns
Fall Time
tf
See specified Test Circuit
150
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--70mA
1.32
nC
Gate Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--70mA
0.17
nC
Gate Drain Charge
Qgd
VDS=--10V, VGS=--10V, ID=--70mA
0.34
nC
Diode Forward Voltage
VSD
IS=--70mA, VGS=0
0.85
1.2
V
Marking : XC
Switching Time Test Circuit
PW=10
s
D.C.
1%
0V
--10V
VIN
P.G
50
G
D
ID= --40mA
RL=625
VDD= --25V
VOUT
5HP01N
S
VIN
0
0
--0.01
--0.02
--0.03
--0.04
--0.06
--0.07
--0.4
--0.05
--0.8
--1.2
--1.6
--2.0
--0.2
--0.6
--1.0
--1.4
--1.8
ID -- VDS
VGS= --2.5V
--3.0V
--8.0V
--6.0V
--10.0V
--4.0V
0
0
--0.04
--0.02
--1
--0.06
--0.08
--2
--0.10
--0.12
--0.14
--4
--3
--5
--6
ID -- VGS
VDS= --10V
--2
30
--3
35
--4
40
--5
45
--6
50
10
15
20
25
--7
--8
--9
--10
RDS(on) -- VGS
Ta=25
C
ID= --20mA
--40mA
RDS(on) -- ID
IT00103
IT00104
IT00105
IT00106
T
a= -
-25
C
25
C
75
C
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
-
-
A
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
--0.01
10
--0.1
2
3
5
7
2
3
100
7
5
3
2
VGS= --10V
--25
C
25
C
Ta=75
C
5HP01N
No.6642-3/4
0
0
0.2
--1
--2
0.4
--3
--4
0.6
--5
--6
--7
0.8
--8
1.0
--9
1.2
--10
1.4
1.6
VGS -- Qg
VDS= --10V
ID= --0.07A
0
0.1
1.0
--15
--5
10
7
5
3
2
7
5
3
2
7
5
3
2
--20
--10
--30
--25
100
--40
--35
--50
--45
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
f=1MHz
IT00113
IT00112
Ciss
Coss
Crss
--0.01
10
1.0
--0.1
2
3
5
7
1000
100
7
5
3
2
7
5
3
2
7
5
3
2
SW Time -- ID
IT00111
td(on)
tr
VDD= --25V
VGS= --10V
tf
td(off)
IF -- VSD
y
fs
-- ID
IT00109
IT00110
--60
0
15
10
5
20
25
30
35
40
--40
--20
0
20
40
60
80
100
120
140
160
RDS(on) -- Ta
I D
= -
-20mA,
V GS
= -
-4V
I D
= --40mA,
V GS
= --10V
RDS(on) -- ID
IT00107
IT00108
PD -- Ta
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Ambient Temperature, Ta --
C
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
Drain Current, ID -- A
F
orw
ard T
ransfer
Admittance,
yfs
-
-
S
Diode Forward Voltage, VSD -- V
F
orw
ard Current, I
F
-
-
A
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain-to-Source Voltage, VDS -- V
Gate-to-Sourse V
oltage, V
GS
-
-
V
Total Gate Charge, Qg -- nC
Ambient Temperature, Ta --
C
Allo
w
able Po
wer Dissipation, P
D
-
-
W
IT02383
0
0.5
0.3
0.2
0.1
0.4
0
40
120
160
80
20
100
140
60
--0.5
--0.01
--0.8
--0.9
--1.1
--1.0
--1.2
--0.6
--0.7
--0.1
3
2
7
5
3
2
VGS = 0
--0.01
0.01
--0.1
2
3
5
7
2
3
0.1
1.0
7
5
3
2
7
5
3
2
VDS= --10V
Ta= -
-25
C
--25
C
25
C
T
a=75
C
25
C
75
C
--0.01
10
2
3
5
7
2
3
5
7
--0.1
2
3
5
7
2
1000
100
3
VGS= --4V
--25
C
Ta=75
C
25
C
5HP01N
No.6642-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
PS
Note on usage : Since the 5HP01N is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
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