Overview
The LA4585M is a preamplifier plus power amplifier IC
that supports auto-reverse and was developed for use in
3-V headphone stereo products.
Features
The LA4585M is designed for use in playback-only
compact cassette players. In addition to preamplifier and
power amplifier functions, the LA4585M also provides
low boost and automatic power output limiter
(PVSS:Peak Volume Select System) functions.
Provided in a mini-flat 36-pin quad package (0.65 mm
lead pitch) optimal for miniature end products.
Two auto-reverse playback preamplifiers
Two headphone power amplifiers (16
)
Low boost function (auto-loudness effect)
Output limiter function (PVSS)
Two radio input switches (pre-muting switches)
Power muting switch
Package Dimensions
unit: mm
3162B-QFP36
Monolithic Linear IC
Ordering number : EN5661
73097HA(OT) No. 5661-1/5
SANYO: QFP36
[LA4585M]
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
3-V Preamplifier + Power Amplifier for
Headphone Stereo Products
LA4585M
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
4.5
V
Allowable power dissipation
Pd max
375
mW
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
40 to +150
C
Specifications
Maximum Ratings
at Ta = 25C
Parameter
Symbol
Conditions
Ratings
Unit
Recommended supply voltage
V
CC
3.0
V
Operating supply voltage range
V
CC
op
1.8 to 3.6
V
Operating Conditions
at Ta = 25C
Ambient temperature, Ta C
Allowable power dissipation, Pd max mW
No. 5661-2/5
LA4585M
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[PRE + LOW BOOST + PVSS + PWR]
Quiescent current
I
CCO
1
Rg = 2.2 k
, low boost off, PVSS off
12
15
21
mA
I
CCO
2
Rg = 2.2 k
, low boost on, PVSS on
12
15
21
A
Voltage gain (closed loop)
VG
T
V
O
= 5 dBm
62
64
67
dB
[PRE AMP]
Voltage gain (open loop)
VG
0
V
O
= 5 dBm
70
83
dB
Voltage gain (closed loop)
VG1
V
O
= 5 dBm
40
dB
Maximum output voltage
V
O
max1
THD = 1 %, V
CC
= 1.8 V
0.1
0.2
V
Total harmonic distortion
THD1
V
O
= 0.2 V, VG = 40 dB/NAB
0.05
0.5
%
Equivalent input noise voltage
V
NI
Rg = 2.2 k
, BPF = 20 Hz to 20 kHz
1.3
2.0
V
Crosstalk
CT1
Rg = 2.2 k
, TUNE 1 kHz
60
80
dB
Ripple rejection ratio
SVRR
Rg = 2.2 k
, V
CC
= 1.8 V, Vr = 20 dBm,
40
50
dB
fr = 100 Hz
[POWER AMP]
Output voltage
P
O
THD = 10 %
23
34
mW
Voltage gain
VG2
V
O
= 5 dBm
27
29
32
dB
Total harmonic distortion
THD2
P
O
= 1 mW
0.4
1.0
%
Interchannel crosstalk
CT2
V
O
= 5 dBm, R
V
= 0
30
40
dB
Output noise voltage
V
NO
1
R
V
= 0
, BPF = 20 Hz to 20 kHz
25
40
V
Ripple rejection ratio
R
r
2
R
V
= 0
, Vr = 20 dBm,
45
55
dB
fr = 100 Hz, V
CC
= 1.8 V
Input resistance
Ri
22
30
38
k
DC offset voltage
V
ODC OFF
Between pin 6 and pins 4 and 8
90
+90
mV
[LOW BOOST]
Voltage gain
VG3
Vi = 30 dBm, boost on/off
2.3
3.8
5.3
dB
Boost
*
BST1
Vi
BST
= 30 dBm, f = 100 Hz, boost on
11.2
14.7
18.2
dB
BST2
Vi
BST
= 30 dBm, f = 10 kHz, boost on
7.0
8.5
10
dB
Maximum output voltage
V
O
max2
THD = 1%, boost on
0.25
0.4
V
Total harmonic distortion
THD3
V
O
= 0.1 V, boost on
0.1
0.5
%
Interchannel crosstalk
CT3
V
O
= 20 dBm, Rg = 0, boost on
25
32
dB
Output noise voltage
V
NO
2
Rg = 0, BPF = 20 Hz to 20 kHz, boost on
2.0
5.0
V
Ripple rejection ratio
R
r
3
Rg = 0, f
R
= 100 Hz, V
R
= 20 dBm,
45
53
dB
V
CC
= 1.8 V, boost on
[LOW BOOST + PVSS + POWER] The following items are measured at an R
V
of 10 k
maximum.
Voltage gain
VG4
Vi = 40 dBm, f = 1 kHz, boost off/on
22
24
27
dB
LOW BOOST output voltage
V
O
1
Vi = 43 dBm, f = 100 Hz, boost on
0.13
0.23
0.33
V
LOW BOOST output voltage
V
O
2
Vi = 28 dBm, f = 100 Hz, boost on
0.25
0.40
0.55
V
LOW BOOST total harmonic distortion
THD4
Vi = 40 dBm, f = 100 Hz, boost on
0.5
1.2
%
Output noise voltage
V
NO
3
Rg = 0, CCIR-ARM, boost off, with the power
88
85
82
dBm
input switch K18 set to B.
PVSS voltage
V
O
3
Vi = 40 dBm, PVSS 2
40
37
34
dBm
PVSS width
W
PVSS
The input amplitude between the start point and
30
40
dB
the point where the output is +4 dB. PVSS on
PVSS harmonic distortion
THD5
Vi = 40 dBm, PVSS 2
0.5
1.2
%
PVSS start input level
V
OPi
PVSS 2
67
63
59
dBm
Operating Characteristics
at Ta = 25C, V
CC
= 3.0 V, fi = 1 kHz, 0.775 = 0 dBm, preamplifier R
L
= 10 k
,
low boost, power amplifier R
L
= 10
Note:
*
The amount of boost for a 1-kHz input.
No. 5661-3/5
LA4585M
Block Diagram
Low
boost
Sys.
cont
Test Circuit Diagram
No. 5661-4/5
LA4585M
Low
boost
Sys.
cont
No. 5661-5/5
LA4585M
This catalog provides information as of July, 1997. Specifications and information herein are subject to change
without notice.
s
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace
equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of
which may directly or indirectly cause injury, death or property loss.
s
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and
distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all
damages, cost and expenses associated with such use:
Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on
SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees
jointly or severally.
s
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Sample Application Circuit
The use of polyester film or ceramic
capacitors is recommended. However,
capacitors whose capacitances are
guaranteed for the operating temperature
range of the end product should be used.
Low
boost
Sys.
cont
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