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Электронный компонент: MCH6603

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30300TS (KOTO) TA-2458 No.6446-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6446
MCH6603
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings
at Ta = 25C
0.25
0.25
2.1
1.6
2.0
0.65
0.3
0.85
0.15
0.15
1
3
2
6
4
5
Electrical Characteristics
at Ta = 25C
Package Dimensions
unit:mm
2173
[MCH6603]
Features
Low ON resistance.
Ultrahigh-speed swithcing.
2.5V drive.
Composite type with 2 MOSFETs contained in one
package, facilitating high-density mounting.
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Mounted on a ceramic board (900mm
2
0.8mm) 1unit
C
C
Marking : FC
Continued on next page.
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6
No.6446-2/4
MCH6603
Electrical Connection
Switching Time Test Circuit
Continued from preceding page.
PW=10
s
D.C.
1%
0V
--4V
VIN
VIN
P.G
50
G
S
ID=--40mA
RL=625
VDD=--25V
VOUT
D
MCH6603
D1
G2
S2
S1
G1
D2
(Top view)
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1
V
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
--0.07
--0.06
--0.05
--0.04
--0.03
--0.02
--0.01
ID -- VDS
VGS=--1.5V
--2.0V
--6.0V
--4.0V
--2.5V
0
0
--0.5
--1.0
--1.5
--2.0
--0.14
--0.12
--0.1
--0.08
--0.06
--0.04
--0.02
--2.5
--3.0
--4.0
--3.5
ID -- VGS
VDS=--10V
0
10
--1
15
--2
20
--3
25
30
--4
--5
35
--6
40
--7
--8
--9
--10
RDS(on) -- VGS
Ta=25
C
10
--0.01
--0.1
2
3
5
7
2
3
100
7
5
3
2
RDS(on) -- ID
VGS=--4V
IT00090
IT00092
IT00091
IT00093
Ta=75
C
T
a=-
-25
C
75
C
25
C
--25
C
--3.0V
--3.5V
25
C
ID=20mA
40mA
Drain Current,
I
D
A
Drain-to-Source Voltage, V
DS
V
Drain Current,
I
D
A
Gate-to-Source Voltage, V
GS
V
Gate-to-Source Voltage, V
GS
V
Static Drain-to-Source
On-State Resistance,
R
DS
(on)
Static Drain-to-Source
On-State Resistance,
R
DS
(on)
Drain Current, I
D
A
No.6446-3/4
MCH6603
10
--0.01
--0.1
2
3
5
7
2
3
1000
100
7
5
3
2
7
5
3
2
RDS(on) -- ID
VGS=--2.5V
10
--0.001
--0.01
2
3
5
7
2
3
100
7
5
3
2
RDS(on) -- ID
VGS=--1.5V
IT00094
IT00095
Ta=75
C
25
C
--25
C
Ta=75
C
25
C
--25
C
0
0
--1
--2
0.2
--3
--4
--5
--6
--7
0.6
0.4
--8
--9
1.0
0.8
--10
1.4
1.2
1.6
VGS -- Qg
SW Time -- ID
VDS=--10V
ID=--70mA
--0.01
10
--0.1
2
3
5
7
100
7
5
3
2
7
5
3
2
1000
VDD=--25V
VGS =--4V
0
0.1
1.0
--10
--5
10
7
5
3
2
7
5
3
2
7
5
3
2
--20
--15
--30
--25
100
--40
--35
--50
--45
Ciss, Coss, Crss -- VDS
f=1MHz
--0.5
--0.8
--0.9
--1.0
--1.1
--0.6
--0.7
--0.01
--0.1
5
3
2
7
5
3
2
--1.2
VGS=0
IF -- VSD
IT00098
IT00100
IT00101
IT00099
T
a=75
C
25
C
--25
C
Ciss
Coss
Crss
td(on)
td(off)
tr
tf
0.01
--0.01
--0.1
2
3
5
7
2
3
0.1
1.0
7
5
3
2
7
5
3
2
y
fs
-- ID
VDS=--10V
--60
10
--40
15
--20
20
0
25
30
20
35
40
60
40
80
100
120
140
160
RDS(on) -- Ta
IT00096
IT00097
I D
=--20mA, V
GS
=--2.5V
I D
=--40mA, V
GS
=--4.0V
Ta=--25
C
75
C
25
C
Static Drain-to-Source
On-State Resistance,
R
DS
(on)
Static Drain-to-Source
On-State Resistance,
R
DS
(on)
Drain Current, I
D
A
Static Drain-to-Source
On-State Resistance,
R
DS
(on)
Drain Current, I
D
A
Ambient Temperature, Ta C
Forward Transfer Admittance,
|
y
f
s|
S
Drain Current, I
D
A
Diode Forward Voltage, VSD V
Forward Current,
I
F
A
Switching Time, SW
Time
n
s
Drain Current, I
D
A
Ciss, Coss, Crss
p
F
Drain-to-Source Voltage, V
DS
V
Gate-to-Source Voltage,
V
GS
V
Total Gate Charge, Qg nC
PS No.6446-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
MCH6603
0
0
20
40
0.2
0.4
0.6
0.8
1.0
60
80
100
120
140
160
PD -- Ta
IT01738
Drain Current
,I
D
A
Drain-to-Source Voltage, V
DS
V
Ta=25
C
Single pulse
1unit
Mounted on a ceramic board (900mm
2
0.8mm)
Allowable Power Dissipation,
P
D
W
Ambient Temperature, Ta C
Mounted on a ceramic board (900mm
2
0.8mm) 1unit
A S O
2
3
5
7
2
3
5
7
7
5
3
2
7
5
3
2
--0.01
--0.1
--1.0
--1.0
--10
--100
DC operation
IDP=--0.56A
ID=--0.14A
10
s
1ms
10ms
100ms
IT01737
Operation in this
area is limited by RDS(on).