TIG004SS
No.7397-1/3
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Emitter Voltage
VCES
400
V
Gate-to-Emitter Voltage (DC)
VGES
6
V
Gate-to-Emitter Voltage (Pulse)
VGES
8
V
Collector Current (Pulse)
ICP
PW
500
s, duty cycle
0.5%
150
A
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--40 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=5mA, VGE=0
400
V
Collector-to-Emitter Cutoff Current
ICES
VCE=320V, VGE=0
10
A
Gate-to-Emitter Leakage Current
IGES
VGE=
6V, VCE=0
10
A
Gate-to-Emitter Threshold Voltage
VGE(off)
VCE=10V, IC=1mA
0.5
1.2
V
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=150A, VGE=4V
4.2
5.5
V
VCE(sat)2
IC=60A, VGE=2.5V
2.4
3.4
V
Input Capacitance
Cies
VCE=10V, f=1MHz
3300
pF
Output Capacitance
Coes
VCE=10V, f=1MHz
75
pF
Reverse Transfer Capacitance
Cres
VCE=10V, f=1MHz
40
pF
Note : TIG004SS has protection diode between gate and emitter but handling it requires sufficient care to be taken.
Features
Low-saturation voltage.
4V drive.
Enhansment type.
Built-in Gate-to-Emitter protection diode.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7397
TIG004SS
Package Dimensions
unit : mm
2203
[TIG004SS]
22004 TS IM TA-3794
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel IGBT
Light-Controlling Strobe Applications
1
4
5
8
4.4
0.3
6.0
0.2
5.0
0.595
1.27
1.5
0.1
1.8max
0.43
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : SOP8
TIG004SS
No.7397-2/3
Electrical Connection
1
E
2
E
3
E
4
G
C
8
C
7
C
6
C
5
5V
IT04213
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
Collector
-to-Emitter V
oltage, V
CE
--
V
Collector Current, I
C
--
A
0
1
2
3
4
5
0
20
40
60
80
120
140
160
180
100
200
0
1.5
0.5
1.0
2.5
2.0
3.5
3.0
5.0
4.0
4.5
IT04215
0
1
2
3
4
5
6
IT04214
IC -- VGE
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V
Gate-to-Emitter Voltage, VGE -- V
Collector Current, I
C
--
A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
80
100
120
140
160
60
180
IT04216
Cies, Coes, Cres
-
-
pF
0
40
45
15
20
10
30
35
25
5
10
100
7
5
3
2
1000
7
5
3
2
10000
7
5
3
2
Cies, Coes, Cres -- VCE
Tc=25
C
Tc=25
C
VCE=5V
VGE=2V
Tc=25
C
IC=150A
120A
Cies
Coes
Cres
90A
60A
4V
3V
IT04217
Case Temperature, Tc --
C
Gate-to-Emitter Cutof
f
V
oltage,
V
GE
(of
f)
--
V
0
50
75
100
125
150
25
--25
--50
0.8
0.6
1.0
1.2
0.4
0.2
0
VGE(off) -- Tc
VCE=10V
IC=1mA
IT04218
Case Temperature, Tc --
C
0
50
75
100
125
150
25
--25
--50
4
3
5
6
7
2
1
0
VCE(sat) -- Tc
VGE
=4.0V
, IC=150A
VGE=2.5V, IC
=60A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
TIG004SS
No.7397-3/3
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2004. Specifications and information herein are subject
to change without notice.
PS
ICP -- VGE
Gate-to-Emitter Voltage, VGE -- V
IT04219
Collector Current(Pulse), I
CP
-
-
A
Collector Current(Pulse), ICP -- A
2
4
5
6
7
8
3
1
0
100
80
60
140
120
160
40
20
0
IT04220
Maximum Capacitor
, CM -
-
F
40
80
100
120
140
160
60
20
0
200
150
250
300
350
400
100
50
0
CM -- ICP
Tc=25
C
Tc=70
C
CM=240
F
VCM=350V
Tc
70
C
VGE=4V
RG
30
Note 1 : The gate series resistance RG must be 30
or more to protect the device when it is turned off.
Note 2 : The collector current gradient di/dt must be smaller than 150A/
s and the collector voltage gradient dv/dt must be smaller than 400V/
s to
protect the device when it is turned off.
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