TN4R02
No.7649-1/4
TN4R02
370-0596 11
RCC IC
MOSFET
Absolute Maximum Ratings / Ta=25
unit
VDS
450
V
(DC)
ID
6
A
()
IDP
PW 10s, duty cycle 1
24
A
VIN
30
V
PD
2.0
W
Tc=25
35
W
Topr
- 25 125
Tj
150
Tstg
- 55 150
Electrical Characteristics / Ta=25
unit
min
typ
max
[MOSFET ]
V(BR)DSS
ID=1mA, VDELAY=0
450
V
IDSS
VDS=450V, VDELAY=0
1.0
m
A
VGS(off)
VDS=10V, ID=1mA
3.0
4.0
V
RDS(on)
ID=3.3A, VDELAY=15V
0.95
1.3
Ciss
VDS=20V, f=1MHz
790
pF
Coss
VDS=20V, f=1MHz
210
pF
[IC ]
VIN(OV)
IIN=1mA, VFB=0
30
V
FB
VFB
VDELAY, VIN=10V, IIN=50mA
2.0
V
RCC
13004 TS IM TA-100804
()
No. N 7 6 4 9
TN4R02
No.7649-3/4
[Feedback control]
[Semi-regulated control]
5
4
3
2
1
+
+
GND
VOUT
VIN(AC)
1 : FB
2 : DELAY
3 : DRAIN
4 : VIN
5 : SOURCE (GND)
5
4
3
2
+
+
+
GND
VOUT
VIN(AC)
1 : FB
2 : DELAY
3 : DRAIN
4 : VIN
5 : SOURCE (GND)
1
Forward Bias ASO
0
0.5
1.0
1.5
2.5
2.0
0
, Ta -- C
PD -- Ta
, P
D
-
- W
IT06504
40
20
100
120
60
80
140
160
100
10
1.0
2
3
5
7
2
3
5
7
2
3
5
7
, VDS -- V
, I
D
-
- A
IT06507
0.01
0.1
1.0
10
2
3
5
7
2
3
5
7
2
5
3
2
5
3
7
Tc=25C
1
Operation in this
area is limited by RDS(on).
DC operation
10s
100
s
1ms
10ms
100ms
ID=6A
IDP=24A
10
s
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