ChipFind - документация

Электронный компонент: 1N5711CSM

Скачать:  PDF   ZIP
70V
15mA
430mW
55 to +125C
65 to +150C
400C/W
V
RRM
Repetitive Peak Reverse Voltage
I
F
Forward Continuous Current T
A
=
25C
P
tot
Power Dissipation T
A
=
25C
T
case
Operating Temperature Range
T
stg
Storage Temperature Range
R
th
JunctionAmbient
ABSOLUTE MAXIMUM RATINGS
(T
MB
= 25C unless otherwise stated)
1N5711CSM
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
MECHANICAL DATA
Dimensions in mm (inches)
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
SCHOTTKY DIODE IN
HERMETIC CERAMIC
SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY
APPLICATIONS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
R*
Reverse Current
V
F*
Forward Voltage
V
(BR)
Breakdown Voltage
C
Capacitance
t
Effective Minority Carrier Lifetime
T
amb
= 25C
V
R
= 50V
T
amb
= 25C
I
F
= 1mA
T
amb
= 25C
I
F
= 15mA
T
amb
= 25C
I
R
= 10
m
A
T
amb
= 25C
V
R
= 0V
f = 1MH
Z
T
amb
= 25C
I
F
= 5mA
0.2
0.41
1
70
2
100
m
A
V
V
P
F
ps
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
SOT23 CERAMIC
(LCC1 PACKAGE)
PAD 1 -- Anode
PAD 2 -- N/C
PAD 3 -- Cathode
Underside View
* Pulse test
300
m
s ,
d
2%