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Электронный компонент: 2N2904

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Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
2N2904
GENERAL PURPOSE PNP
TRANSISTOR
FEATURES
SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
CECC SCREENING OPTIONS
LOW NOISE AMPLIFIER
APPLICATIONS:
GENERAL PURPOSE
HIGH SPEED SATURATED SWITCHING
V
CEO
Collector Emitter Voltage
V
CBO
Collector Base Voltage
V
EBO
Emmiter Base Voltage
I
C
Collector Current Continuous
P
D
Total Device Dissipation @ T
A
= 25C
Derate above 25C
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
T
J
, T
STG
Operating and Storage Junction Temperature Range
40V
60V
5V
600mA
600mW
3.43mW/ C
3W
17.2mW / C
65 to +200C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PIN 1 Emitter
Underside View
PIN 2 Base
PIN 3 Collector
0 . 8 9
( 0 . 0 3 5 )
m a x .
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5
1
2
3
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)CEO
CollectorEmitter Breakdown Voltage
1
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CEX
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
B
Base Current
h
FE
DC Current Gain
V
CE(sat)
Collector Emitter Saturation Voltage
1
V
BE(sat)
Base Emitter Saturation Voltage
f
t
Current Gain Bandwidth Product
2
C
obo
Output Capacitance
C
ibo
Input Capacitance
t
on
TurnOn Time
t
d
Delay Time
t
r
RiseTime
t
off
TurnOff Time
t
s
Sorage Time
t
f
FallTime
I
C
= 10mA
I
B
= 0
I
C
= 10
A
I
E
= 0
I
C
= 0
I
E
= 10
A0
V
CE
= 30V
V
BE
= 0.5V
V
CB
= 50V
I
E
= 0
V
CB
= 50V
I
E
= 0
T
A
= 150
C
V
CE
= 30V
V
BE
= 0.5V
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 500mA
V
CE
= 10V
1
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
1
I
C
= 500mA
I
B
= 50mA
V
CE
= 20V
I
C
= 50mA
f = 100MHz
V
CB
= 10V
I
E
= 0
f = 100kHz
V
BE
= 2..0V
I
C
= 0
f = 100kHz
V
CC
= 30V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 6V
I
C
= 150mA
I
B1
= I
B2
=15mA
V
nA
A
nA
--
V
V
MHz
pF
ns
ns
40
60
5.0
50
0.02
20
50
20
25
35
20
0.4
1.6
1.3
2.6
200
8.0
30
26
45
6.0
10
20
40
70
100
50
80
20
30
OFF CHARACTERISTICS
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N2904
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
1) Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS