LAB
SEME
Prelim.3/00
2N2907ACSM
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
HIGH SPEED, MEDIUM POWER, PNP
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2907A for high reliability /
space applications requiring small size
and low weight devices.
V
CBO
Collector - Base Voltage
V
CEO
Collector - Emitter Voltage
V
EBO
Emitter - Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50C
R
ja
Thermal Resistance Junction to Ambient
T
stg,
T
j
Storage Temperature, Operating Temp Range
60V
60V
5V
600mA
350mW
2.0mW / C
350C / W
55 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PAD 1 Base
Underside View
PAD 2 Emitter
PAD 3 Collector
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
LAB
SEME
Prelim.3/00
2N2907ACSM
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
CC
= 30V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 6V
I
C
= 150mA
I
B1
= I
B2
= 15mA
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
I
C
= 0
V
CE
= 30V
V
BE
= 0.5V
I
E
= 0
V
CB
= 50V
T
C
= 125C
V
CE
= 30V
V
BE
= 0.5V
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 500mA
V
CE
= 10V
V
CEO(sus)*
Collector Emitter Sustaining Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CEX*
Collector Cut-off Current
I
CBO*
Collector Base Cut-off Current
I
BEO
Base Cut-off Current
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
60
60
5
50
0.01
10
50
0.4
1.6
1.3
2.6
75
100
100
100
300
50
V
V
V
nA
m
A
nA
V
V
--
f
T
Transition Frequency
C
ob
Output Capacitance
C
ib
Input Capacitance
I
C
= 50mA
V
CE
= 20V
f = 100MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
V
BE
= 2V
I
C
= 0
f = 1.0MHz
200
8
30
MHz
pF
pF
t
on
Turn-on Time
t
d
Delay Time
t
r
Rise Time
t
off
Turn-off Time
t
s
Storage Time
t
f
Fall Time
26
45
6.0
10
20
40
70
100
50
80
20
30
ns
ns
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
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