Prelim. 9/95
2N2913
2N2915
2N2917
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DUAL NPN
PLANAR TRANSISTORS IN
TO77 PACKAGE
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage 1
V
EBO
Emitter Base Voltage
I
C
Continuous Collector Current
P
D
Total Device Dissipation
T
AMB
= 25C
Derate above 25C
P
D
Total Device Dissipation
T
C
= 25C
Derate above 25C
T
STG
Storage Temperature Range
T
L
Lead temperature (Soldering, 10 sec.)
45V
45V
6V
30
300mW
500mW
1.72mW / C
2.86W / C
750mW
1.5W
4.3mW / C
8.6mW / C
65 to 200C
300C
MECHANICAL DATA
Dimensions in mm (inches)
TO77 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25C unless otherwise stated)
PIN 1 Collector 1
PIN 2 Base 1
PIN 3 Emitter 1
PIN 4 Emitter 2
PIN 5 Base 2
PIN 6 Collector 2
1.02
(0.040)
Max.
1
2
.7
(0
.5
0
0
)
Mi
n
.
6
.
10
(
0
.
2
40)
6
.
60
(
0
.
2
60)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
0.74 (0.029)
1.14 (0.045)
1
6
4
3
2
45
0.71 (0.028)
0.86 (0.034)
0.41 (0.016)
0.53 (0.021)
5
NOTES
1. Base Emitter Diode Open Circuited.
EACH SIDE
TOTAL DEVICE
2N2915
2N2917
Parameter
Test Conditions
Min. Typ. Max. Min. Typ. Max.
Unit
--
mV
mV
0.9
1
3
5
0.8
1
0.8
1
5
10
1.6
2
V
CE
= 5V
I
C
= 100
mA
See Note 2.
V
CE
= 5V
I
C
= 100
mA
V
CE
= 5V
I
C
= 10
mA to 1mA
V
CE
= 5V
I
C
= 100
mA
T
A1
= 25C
T
A2
= 55C
V
CE
= 5V
I
C
= 100
mA
T
A1
= 25C
T
A2
= 125C
TRANSISTOR MATCHING CHARACTERISTICS
Prelim. 9/95
2N2913
2N2915
2N2917
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
1
Min.
Typ.
Max.
Unit
V
nA
mA
nA
--
V
W
mmho
--
pF
45
45
6
10
10
2
2
60
240
15
100
150
0.70
0.35
25
32
1
3
6
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)CEO*
Collector Emitter Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
BE
Base Emitter Voltage
V
CE(sat)
Collector Emitter Saturation Voltage
h
ib
Small Signal Common Base
Input Impedance
h
ob
Small Signal Common Base
Output Admittance
|h
fe
|
Small Signal Common Base
Current Gain
C
obo
Common Base Open Circuit
Output Capacitance
I
C
= 10
mA
I
E
= 0
I
C
= 10mAI
B
= 0
I
E
= 10
mA
I
C
= 0
V
CB
= 45V
I
E
= 0
T
A
= 150C
V
CE
= 5V
I
B
= 0
V
EB
= 5V
I
C
= 0
V
CE
= 5V
I
C
= 10
mA
T
A
= 55C
V
CE
= 5V
I
C
= 100
mA
V
CE
= 5V
I
C
= 1mA
V
CE
= 5V
I
C
= 100
mA
I
B
= 100
mA
I
C
= 1mA
V
CB
= 5V
I
C
= 1mA
f = 1kHz
V
CB
= 5V
I
C
= 1mA
f = 1kHz
V
CE
= 5V
I
C
= 500
mA
f = 20MHz
V
CB
= 5V
I
E
= 0
f = 140kHz to 1MHz
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
INDIVIDUAL TRANSISTOR CHARACTERISTICS
* Pulse Test: t
p
= 300
ms , d 1%.
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
FE1
.
h
FE1
h
FE2
|V
BE1
V
BE2
|
|
D(V
BE1
V
BE2
)
DT
A
|
Static Forward Current
Gain Balance Ratio
Base Emitter Voltage
Differential
Base Emitter Voltage
Differential Change With
Temperature
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