Prelim.01/01
2N3053
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
MEDIUM POWER SILICON
NPN PLANAR TRANSISTOR
FEATURES
V
CEO =
40V
I
C
= 0.7A
P
tot
= 5W
V
CBO
Collector
Base Voltage
V
CEO
Collector
Emitter Voltage
V
CER
Collector
Emitter Sustaining Voltage
V
CEX
Collector - Emiiter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
TOT
Power Dissipation T
amb
= 25C
T
case
= 25C
T
j
Junction Temperature
T
stg
Storage Temperature
R
th(jc)
Thermal Resistance Junction to Case
R
th(ja)
Thermal Resistance Junction to Ambient
60V
40V
50V
60V
5V
0.7A
1W
5W
200C
65 to 200C
35C / W
175C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
Pin 1 = Emitter
Underside View
Pin 2 = Base
Pin 3 = Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Prelim.01/01
2N3053
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
I
C
= 100mA
I
B
= 0
R
BE
= 10
W
I
C
= 100mA
I
C
= 0.1mA
I
E
= 0
I
E
= 0.1mA
I
C
= 0
V
CB
= 30V
I
E
= 0
V
EB
= 4V
I
C
= 0
I
C
= 0.15A
I
B
= 0.015A
I
C
= 0.15A
I
B
= 0.015A
I
C
= 0.15A
V
CE
= 10V
V
CE
= 10V
I
C
= 0.05A
f = 100MHz
V
CB
= 10V
f =1MHz
V
EB
= 10V
f =1MHz
V
CEO(SUS)
Collector Emitter Voltage
V
CER(SUS)*
Collector Emitter Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CBO
Collector Base Cut-off Current
I
EBO
Emitter - Base Cut-off Current
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
21E*
Static Forward Current Transfer ratio
f
T
Transistion Frequency
C
22b
Output Capacitance
C
11b
Input Capacitance
40
50
60
5
0.25
0.25
1.4
1.7
50
250
100
15
80
V
m
A
V
--
MHz
pF
*
Pulsed
t
p
=
300
m
S
d
2 %
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