2N3439
2N3440
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3066
Issue: 1
7V
1A
0.5A
5W
1W
65 to 200C
200C
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HIGH VOLTAGE
APPLICATIONS:
These devices are particularly suited as
drivers in high-voltage low current inverters,
switching and series regulators.
V
CBO
Collector Base Voltage (I
E
= 0)
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
C
= 0)
I
C
Collector Current
I
B
Base Current
P
tot
Total Power Dissipation at T
case
25C
T
amb
50C
T
stg
Storage Temperature
T
j
Junction Temperature
450V
350V
300V
250V
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
2N3439
2N3440
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
TO39 PACKAGE (TO-205AD)
2N3439
2N3440
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3066
Issue: 1
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 50mA
2N3439
I
C
= 50mA
2N3440
V
CE
= 300V
2N3439
V
CE
= 200V
2N3440
V
CE
= 450V
2N3439
V
CE
= 300V
2N3440
V
CB
= 350V
2N3439
V
CB
= 250V
2N3440
V
EB
= 6V
I
C
= 50mA
I
B
= 4mA
I
C
= 50mA
I
B
= 4mA
I
C
= 20mA
V
CE
= 10V
I
C
= 2mA
V
CE
= 10V
V
CEO(sus)*
Collector Emitter Sustaining Voltage
(I
B
= 0)
I
CEO
Collector Cut-off Current
(I
B
= 0)
I
CEX
Collector Cut-off Current
(V
BE
= -1.5V)
I
CBO
Collector Base Cut-off Current
(I
E
= 0)
I
EBO
Emitter Cut-off Current (I
C
= 0)
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
f
T
Transition Frequency
C
ob
Output Capacitance
hfe
Small Signal Current Gain
I
C
= 10mA
V
CE
= 10V
f = 5MHz
V
CB
= 10V
f = 1MHz
I
C
= 5mA
V
CE
= 10V
f = 1kHz
15
10
25
MHz
pF
--
* Pulse test t
p
= 300
s ,
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
350
250
20
50
500
500
20
20
20
0.5
1.3
40
160
30
V
A
A
A
A
V
V
--
--
2N3439 only
THERMAL DATA
Parameter
Min.
Typ.
Max.
Unit
R
JA
Thermal Resistance Junction to Ambient
175
C/W
R
JC
Thermal Resistance Junction to Case
35
C/W
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