2N3439CSM4R
2N3440CSM4R
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
HIGH VOLTAGE, MEDIUM POWER, NPN
TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
Hermetic Ceramic 4 pin Surface Mount
Package - LCC3
High Voltage Small Signal Type
Full Screening Options Available
"R" Denotes Reverse Pinning
APPLICATIONS:
The 2N3439CSM4 and 2N3440CSM4 are high
voltage silicon epitaxial planar transistors mounted
in the popular 4 pin ceramic surface mount
hermetically sealed package. These products are
specifically intended for use in High reliability
systems and can be ordered with a full range of
screening options from standard Militar y
(equivalent to CECC Full Assessment Level)
through all options up to full space flight level.
V
CBO
Collector Base Voltage (I
E
= 0)
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
B
= 0)
I
C
Collector Current.
I
B
Base Current.
P
tot
Total Power Dissipation at T
amb
= 25C with product
mounted on a suitable PCB to provide a heat path.
T
stg
Storage Temperature.
T
j
Maximum Junction Temperature.
450V
350V
7V
1A
0.5A
0.5W
300V
250V
7V
1A
0.5A
0.5W
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
LCC3 PACKAGE
Underside View
PAD 1 Collector
PAD 2 Emitter
PAD 3 N/C
PAD 4 Base
1
2
3
4
5.59 0.13
(0.22 0.005)
0.23
(0.009)
rad.
1.02 0.20
(0.04 0.008)
2.03 0.20
(0.08 0.008)
1.40 0.15
(0.055 0.006)
0.25 0.03
(0.01 0.001)
0.23
(0.009)
min.
1.
27 0.
05
(
0
.
0
5 0.
002
)
3.
81 0.
13
(
0
.
1
5 0.
00
5)
0.
64 0.
08
(
0
.
025 0.
003)
2N3439CSM4 2N3440CSM4
65 to +200C
+200C
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
350
250
500
500
20
20
20
50
20
0.5
1.3
40
30
2N3439CSM4R
2N3440CSM4R
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
2N3439CSM4R
2N3440CSM4R
2N3439CSM4R
2N3440CSM4R
V
CB
= 360V
2N3439CSM4R
V
CB
= 250V
2N3440CSM4R
V
CE
= 300V
2N3439CSM4R
V
CE
= 200V
2N3440CSM4R
V
EB
= 6V
I
C
= 50mA
I
B
= 4mA
I
C
= 50mA
I
B
= 4mA
I
C
= 20mA
V
CE
= 10V
2N3439CSM4R only
I
C
= 20mA
V
CE
= 10V
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
V
CEO(sus)*
Collector Emitter Sustaining Voltage
(I
B
= 0)
I
CEX*
Collector Cut-off Current
(V
BE
= 1.5V)
I
CBO*
Collector Base Cut-off Current
(I
E
= 0)
I
CEO*
Collector Cut-off Current
(I
B
= 0)
I
EBO*
Emitter Cut-off Current (I
C
= 0)
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
V
m
A
m
A
m
A
m
A
V
--
f
T
Transition Frequency
C
ob
Output Capacitance
hfe
Small Signal Current Gain
I
C
= 10mA
V
CE
= 10V
f = 5MHz
V
CB
= 10V
f = 10MHz
I
C
= 5mA
V
CE
= 10V
f = 1kHz
15
10
25
MHz
pF
* Pulse test t
p
= 300
m
s ,
d
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
I
C
= 50mA
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