2N3735CSM4
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Medium Current NPN Silicon Annular
Transistors Designed for High-Speed
Switching and Driver Applications in a
Ceramic Surface Mount Package
FEATURES
High Voltage
Ceramic Surface Mount Package
Screening Options Available
V
CB
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation T
A
= 25 C
R
q
ja
Thermal Resistance Junction to Ambient
T
J
Junction to Ambient
T
stg
Storage Temperature
75V
50V
5V
1A
0.5W
2.9mW/C
200C
65 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
LCC3 PACKAGE
Underside View
PAD 1 Collector
PAD 2 N/C
PAD 3 Emitter
PAD 4 Base
1
2
3
4
5.59 0.13
(0.22 0.005)
0.23
(0.009)
rad.
1.02 0.20
(0.04 0.008)
2.03 0.20
(0.08 0.008)
1.40 0.15
(0.055 0.006)
0.25 0.03
(0.01 0.001)
0.23
(0.009)
min.
1.
27 0.
05
(
0
.
05 0.
002
)
3.
81 0.
13
(
0
.
15 0.
00
5)
0.
64 0.
08
(
0
.
0
25 0.
003)
50
75
5
0.20
20
0.3
35
40
35
20
80
0.2
0.3
0.5
0.9
0.8
1.0
1.2
0.9
1.4
9.0
80
2.5
8
40
30
30
10
2N3735CSM4
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 10mA
I
B
= 0
I
C
= 10
m
A
I
E
= 0
I
E
= 10
m
A
I
C
= 0
V
CE
= 40V
V
EB
= 2
T
A
= 100
C
V
CE
= 40V
V
EB
= 2
I
C
= 10mA
V
CE
= 1V
I
C
= 150mA
V
CE
= 1V
I
C
= 500mA
V
CE
= 1V
I
C
= 1A
V
CE
= 1.5V
I
C
= 10mA
I
B
= 1mA
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 1A
I
B
= 100mA
I
C
= 10mA
I
B
= 1mA
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 1A
I
B
= 100mA
V
CB
= 10V
I
E
= 0
f = 100KH
Z
V
BE
= 0.5V
I
C
= 0
f = 100KH
Z
V
CE
= 10V
I
C
= 50mA
f = 100MH
Z
V
CC
= 30V
V
BE(off)
= 2V
I
C
= 1A
I
B1
= 100mA
V
CC
= 30V
I
C
= 1A
I
B1
= - I
B2
= 100mA
I
C
= 1A
I
B
= 100mA
V
CC
= 30V
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
V
m
A
--
V
V
pF
--
ns
nC
BV
CEO
Collector-Emitter Breakdown Voltage
1
BV
CBO
Collector-Base Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CEX
Collector Cutoff Current
I
BL
Base Cutoff Current
h
FE
DC Current Gain
1
V
CE(SAT)
Collector- Saturation Voltage
1
V
BE(SAT)
Base-Emitter Saturation Voltage
1
C
ob
Output Capacitance
C
ib
Input Capacitance
h
fe
High Frequency Current Gain
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
Q
T
Total Control Charge
1) Pulse test : Pulse Width
#
300
m
s , Duty Cycle
#
2%
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