Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 4/95
LAB
SEME
2N3799
PNP, LOW NOISE
AMPLIFIER
TRANSISTOR
FEATURES
SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
CECC SCREENING OPTIONS
LOW NOISE AMPLIFIER
APPLICATIONS:
Low Level Amplifier
Instrumentation Amplifiers
General Purpose
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
B
= 0)
I
C
Collector Current
P
D
Total Device Dissipation @ T
A
= 25C
Derate above 25C
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
T
J
, T
STG
Operating and Storage Junction Temperature Range
R
qJA
Thermal Resistance Junction to Ambient
R
qJC
Thermal Resistance Junction to Case
60V
60V
5V
50mA
360mW
2.06mW / C
1.2W
6.86mW / C
65 to +200C
0.49C/mW
0.15C/mW
MECHANICAL DATA
Dimensions in mm (inches)
TO18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PIN 1 Emitter
Underside View
PIN 2 Base
PIN 3 Collector
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 4/95
LAB
SEME
2N3799
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
f
t
Current Gain Bandwidth
Product
1
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
oe
Output Admittance
h
re
Voltage Feedback Ratio
h
fe
Small Signal Current Gain
N
F
Noise Figure
30
100
500
4
8
10
40
5
60
25
300
900
2.5
4
0.8
1.5
1.8
1.5
1.5
2.5
V
CE
= 5V
I
C
= 500
mA
f = 20MHz
V
CE
= 5V
I
C
= 1mA
f = 100MHz
V
CB
= 5V
I
E
= 0
f = 1MHz
V
EB
= 0.5V
I
C
= 0
f = 1MHz
V
CE
= 10V
I
C
= 1mA
f = 1kHz
f = 100Hz
B.W. = 20Hz
f = 1kHz
Spot:
B.W. = 200Hz
f = 10kHz
Noise:
B.W. = 2kHz
f = 1kHz
V
CE
= 10V
I
C
= 100
mA
R
G
= 3k
W
MHz
pF
k
W
mhmos
x 10
-4
--
dB
SMALL SIGNAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
60
60
5
0.01
10
20
0.2
0.25
0.7
0.8
0.7
75
225
300
150
300
300
250
I
C
= 10mA
I
B
= 0
I
C
= 10
mA
I
E
= 0
I
E
= 10
mA
I
C
= 0
V
CB
= 50V
I
E
= 0
T
A
= 150C
V
EB
= 4V
I
C
= 0
I
C
= 100
mA
I
B
= 10
mA
I
C
= 1mA
I
B
= 100
mA
I
C
= 100
mA
I
B
= 10
mA
I
C
= 1mA
I
B
= 100
mA
I
C
= 100
mA
V
CE
= 5V
I
C
= 1
mA
I
C
= 10
mA
I
C
= 100
mA
I
C
= 100
mA
T
A
= 55C
I
C
= 500
mA
I
C
= 1mA
I
C
= 10mA *
V
(BR)CEO
Collector Emitter Breakdown Voltage
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter Saturation Voltage
V
BE(on)
Base Emitter On Voltage
h
FE
DC Current Gain
(V
CE
= 5V)
V
mA
nA
V
V
V
--
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
* Pulse Test: t
p
300ms, d 2%.
1) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
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