2N5428A
MEDIUM POWER
NPN SILICON
TRANSISTOR
Designed for switching and
wide - band amplifier
applications
V
CEO
Collector - emitter voltage
V
CB
Collector - base voltage
V
EB
Emitter - base voltage
I
C
Collector current continuous
I
B
Base current
P
D
Total device dissipation at T
case
= 25C
Derate above 25C
T
j
Operating and
T
stj
storage junction temperature range
R
qJC
Thermal resistance, junction to case.
80 V
80 V
6 V
7 A
1 A
40 W
228 mW / C
4.37 C / W
MECHANICAL DATA
Dimensions in mm
TO66 Package.
ABSOLUTE MAXIMUM RATINGS
(Tcase=25C unless otherwise stated)
-65 to 200C
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
Prelim. 7/93
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
BV
CEO (sus)
Collector - Emitter
sustaining voltage
I
CBO
Collector cutoff current
I
CBO
Collector cutoff current
I
EBO
Emitter cutoff current
80
-
V
-
100
mA
-
10
mA
-
1.0
mA
10
mA
100
mA
Min
Max
Unit
OFF CHARACTERISTICS
Parameter
Test Conditions
I
CEX
Collector cutoff current
I
C
= 50mA , I
B
= 0
V
CE
= 75V , I
B
= 0
V
CE
= 75V , V
EB(off)
= 1.5V
V
CE
= 75V , V
EB(off)
= 1.5V , T
C
= 150C
V
CB
= Rated V
CB
' I
E
= 0
V
BE
= 6V, I
C
= 0
hFE
DC Current gain (1)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
60
-
30
120
30
0.7
1.2
1.2
2.0
ON CHARACTERISTICS
--
V
V
I
C
= 500mA , V
CE
= 2V
I
C
= 2A , V
CE
= 2V
I
C
= 5A , V
CE
= 2V
I
C
= 2A , I
B
= 0.2A
I
C
= 7A , I
B
= 0.7A
I
C
= 2A , I
B
= 0.2A
I
C
= 7A , I
B
= 0.7A
Min
Max
Unit
Parameter
Test Conditions
V
CE(sat)
V
BE(sat)
Current gain
bandwidth product
C
ob
Output capacitance
C
ib
Input capacitance
30
-
MHz
-
250
pF
-
1000
pF
DYNAMIC CHARACTERISTICS
(I
C
= 500 mA, V
CE
= 10V, f = 10 MHz)
(V
CB
= 10V, I
E
= 0, f = 100 kHz)
(V
BE
= 2V, I
C
= 0, f = 100 kHz)
f
T
Parameter
Test Conditions
Min
Max
Unit
td
Delay time
(V
CC
= 40V, V
EB(off)
= 3V
tr
Rise time
I
C
= 2A, I
B1
= 200mA)
ts
Storage time
(V
CC
= 40V, I
C
= 2A
tf
Fall time
I
B1
= I
B2
= 200mA)
-
100
ns
-
100
ns
-
2.0
ms
-
200
ns
SWITCHING CHARACTERISTICS
Parameter
Test Conditions
Min
Max
Unit
(1) Pulse Test: Pulse width = 300
ms, Duty Cycle = 2.0 %
Prelim. 7/93
2N5428A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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