2N5430
MEDIUM POWER
NPN SILICON TRANSISTOR
Designed for switching and wide - band
amplifier applications
V
CEO
Collector Emitter Voltage
V
CBO
Collector Base Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current Continuous
I
B
Base Current
P
D
Total Device Dissipation at T
case
= 25C
Derate above 25C
T
j
Operating and
T
stg
Storage Junction Temperature Range
R
q
JC
Thermal Resistance, Junction to Case.
100 V
100 V
6 V
7 A
1 A
40 W
228 mW / C
65 to 200C
4.37 C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO66 Package.
Pin 1
Base
Pin 2
Emitter
Case
Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25C unless otherwise stated)
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
LAB
SEME
This product is available screened in
accordance with various military specs.
EG.
2N5430CECCQRB
Built and screened in accordance with
CECC procedures.
Screened to sequence B.
Prelim. 1/94
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
BV
CEO (sus)*
Collector Emitter
Sustaining Voltage
I
CBO
Collector Cutoff Current
I
CEX
Collector Cutoff Current
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
100
V
100
m
A
10
m
A
1.0
mA
10
m
A
100
m
A
Min
Max
Unit
OFF CHARACTERISTICS
Parameter
Test Conditions
I
C
= 50mA , I
B
= 0
V
CE
= 90V , I
B
= 0
V
CE
= 90V , V
EB(off)
= 1.5V
V
CE
= 90V , V
EB(off)
= 1.5V , T
C
= 150C
V
CB
= Rated V
CB
, I
E
= 0
V
BE
= 6V , I
C
= 0
hFE
*
DC Current Gain
Collector Emitter
V
CE(sat)*
Saturation Voltage
Base Emitter
V
BE(sat)*
Saturation Voltage
60
60
240
40
0.7
1.2
1.2
2.0
ON CHARACTERISTICS
--
V
V
I
C
= 500mA , V
CE
= 2V
I
C
= 2A , V
CE
= 2V
I
C
= 5A , V
CE
= 2V
I
C
= 2A , I
B
= 0.2A
I
C
= 7A , I
B
= 0.7A
I
C
= 2A , I
B
= 0.2A
I
C
= 7A , I
B
= 0.7A
Min
Max
Unit
Parameter
Test Conditions
Current Gain
f
T
Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
30
MHz
250
pF
1000
pF
DYNAMIC CHARACTERISTICS
I
C
= 500 mA, V
CE
= 10V, f = 10 MHz
V
CB
= 10V, I
E
= 0, f = 100 kHz
V
BE
= 2V, I
C
= 0, f = 100 kHz
Parameter
Test Conditions
Min
Max
Unit
td
Delay Time
V
CC
= 40V, V
EB(off)
= 3V
tr
Rise Time
I
C
= 2A, I
B1
= 200mA
ts
Storage Time
V
CC
= 40V, I
C
= 2A
tf
Fall Time
I
B1
= I
B2
= 200mA
100
ns
100
ns
2.0
m
s
200
ns
SWITCHING CHARACTERISTICS
Parameter
Test Conditions
Min
Max
Unit
* Pulse Test: Pulse width = 300
m
s, Duty Cycle = 2.0 %
Prelim. 1/94
2N5430
LAB
SEME
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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