DESCRIPTION
The 2N5679 and 2N5680 are silicon
expitaxial planar PNP transistors in
jedec TO-39 metal case intended for
use as drivers for high power transis-
tors in general purpose, amplifier and
switching circuit
The complementary NPN types are the
2N5681 and 2N5682 respectively
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25c unless otherwise stated
2N5680
2N5679
2N5679
2N5680
LAB
SEME
Prelim. 3/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
PNP SILICON
TRANSISTORS
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
C
= 0)
I
C
Continuous Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
25C
T
amb
25C
T
stg
Operating and Storage Temperature Range
T
j
Junction temperature
-100V
-120V
-100V
-120V
-4V
-1A
-0.5A
10W
1W
65 to +200C
200C
MECHANICAL DATA
Dimensions in mm (inches)
0 . 8 9
( 0 . 0 3 5 )
m a x .
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5
!
TO-39
Pin 1 Emitter
Pin 2 Base
Pin 3 Collector
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
A
A
mA
A
V
MHz
pF
R
thj-case
R
thj-amb
17.5
175
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
C/W
C/W
-1
-1
-1
-1
-1
-1
-10
-10
-1
-100
-120
-0.6
-1
-2
-1
40
150
5
30
50
40
2N5679
2N5680
LAB
SEME
Prelim. 3/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
CBO
I
CEV
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE*
h
FE*
f
T
C
CBO
h
fe
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Small Signal Current Gain
I
E
= 0
for 2N5679
V
CB
= -100V
for 2N5680
V
CB
= -120V
V
BE
= 1.5
for 2N5679
V
CE
= -100V
for 2N5680
V
CE
= -120V
Tcase = 150C
for 2N5679
V
CE
= -100V
for 2n5680
V
CE
= -120V
I
B
= 0
for 2N5679
V
CE
= -70V
for 2N5680
V
CE
= -80V
I
C
= 0
V
EB
= -4V
I
B
= 0
I
C
= -10mA
for 2N5679
for 2N5680
I
C
= -250mA
I
B
= -25mA
I
C
= -500mA
I
B
= -50mA
I
C
= -1A
I
B
= -200mA
I
C
= -250mA
V
CE
= -2V
I
C
= -250mA
V
CE
= -2V
I
C
= -1A
V
CE
= -2V
I
C
= -100mA
V
CE
= -10V
f = 10MHz
I
E
= 0
V
CB
= -20V
f = 1MHz
I
C
= -0.2A
V
CE
= -1.5V
f = 1KHz
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d
< 2%
THERMAL DATA
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