Prelim. 8/96
2N5784
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO39 package.
V
CBO
Collector Base Voltage
V
CER(sus)
Collector Emitter Sustaining Voltage
R
BE
= 100
W
V
CEO(sus)
Collector Emitter Sustaining Voltage
V
EBO
Emitter Base Voltage
I
C
Continuous Collector Current
I
B
Continuous Collector Current
P
D
Total Device Dissipation
T
A
= 25C
Derate above 25C
P
D
Total Device Dissipation
T
C
= 25C
Derate above 25C
T
J
, T
STG
Operating Junction and Storage Temperature Range
T
L
Lead temperature,
1
/
32
"
(0.8mm) from seating plane for 10 s max.
80V
80V
65V
5V
3.5A
1A
10W
0.057W/C
1W
0.0057W/C
65 to +200C
230C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise stated)
PIN 1 Emitter
PIN 2 Base
PIN 3 Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Prelim. 8/96
2N5784
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
m
A
mA
m
A
mA
m
A
m
A
--
V
V
--
--
m
s
C/W
10
1
10
1
100
10
20
100
4
65
80
1.5
0.5
5
20
25
5
15
17.5
17.5
I
CER
Collector Cut-off Current
I
CEX
Collector Cut-off Current
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE*
DC Current Gain
V
CEO(sus)*
Collector Emitter Sustaining Voltage
1
V
CER(sus)*
Collector Emitter Sustaining Voltage
1
V
BE
Base Emitter Voltage
V
CE(sat)
Collector Emitter Saturation Voltage
2
h
fe
Small Signal Common Emitter
Current Gain
h
fe
Small Signal Common Emitter
Current Gain
t
ON
Turn-on Time
t
OFF
Turn-off Time
R
q
JC
Thermal Resistance Junction Case
R
q
JA
Thermal Resistance Junction Ambient
V
CE
= 65V
R
BE
= 100
W
T
C
= 150C
V
CE
= 75V
V
BE
= -1.5V
R
BE
= 100
W
T
C
= 150C
V
CE
= 50V
I
B
= 0
V
BE
= -5V
I
C
= 0
V
CE
= 2V
I
C
= 1A
V
CE
= 2V
I
C
= 3.2A
I
C
= 100mA
I
B
= 0
I
C
= 100mA
R
BE
= 100
W
V
CE
= 2V
I
C
= 1A
I
C
= 1A
I
B
= 100mA
V
CE
= -2V
I
C
= 100mA
f = 200kHz
V
CE
= 2V
I
C
= 100mA
f = 1kHz
V
CE
= 30V
I
C
= 1A
I
B1
= I
B2
= 100mA
NOTES
*
Pulse Test: t
p
= 300
m
s,
d
= 1.8%.
1)
These tests
MUST NOT be measured on a curve tracer.
2)
Measured
1
/
4
" (6.35 mm) from case. Lead resistance is critical in this test.
3)
Measured at a frequency where
h
fe
is decreasing at approximately 6dB per octave.
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise stated)
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