Prelim. 4/00
2N6659
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
* Pulse width limited by maximum junction temperature.
NCHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
Switching Regulators
Converters
Motor Drivers
V
DS
Drain Source Voltage
V
GS
Gate Source Voltage
I
D
Drain Current
@ T
CASE
= 25C
I
D
Drain Current
@ T
CASE
= 100C
I
DM
Pulsed Drain Current *
P
D
Power Dissipation
@ T
CASE
= 25C
P
D
Power Dissipation
@ T
CASE
= 100C
T
j
Operating Junction Temperature Range
T
stg
Storage Temperature Range
T
L
Lead Temperature (
1
/
16
" from case for 10 sec.)
35V
20V
1.4A
1A
3A
6.25W
2.5W
55 to 150C
55 to 150C
300C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25C unless otherwise stated)
TO39 METAL PACKAGE
Underside View
PIN 1 Source
PIN 2 Gate
PIN 3 Drain
CASE Drain
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Prelim. 4/00
2N6659
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25C unless otherwise stated)
V
GS
= 0V
I
D
= 10
m
A
V
DS
= V
GS
I
D
= 1mA
V
GS
= 15V
V
DS
= 0V
T
CASE
= 125C
V
DS
= 90V
V
GS
= 0V
V
DS
= 72V
V
GS
= 0V
T
CASE
= 125C
V
DS
= 15V
V
GS
= 10V
V
GS
= 5V
I
D
= 0.3A
V
GS
= 10V
I
D
= 1A
T
CASE
= 125C
V
GS
= 5V
I
D
= 0.3A
V
GS
= 10V
I
D
= 1A
T
CASE
= 125C
V
DS
= 10V
I
D
= 0.5A
V
DS
= 10V
I
D
= 0.1A
V
GS
= 10V
I
D
= 1A
f = 1kHz
V
DS
= 24V
V
GS
= 0V
f = 1MHz
V
DD
= 25V
V
GEN
= 10V
R
L
= 23
W
R
G
= 25
W
I
D
= 1A
V
(BR)DSS
Gate Source Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Body Leakage Current
I
DSS
Zero Gate Voltage Drain Current
I
D(on)*
OnState Drain Current
R
DS(on)*
Drain Source On Resistance
V
DS(on)*
Drain Source On Voltage
g
FS*
Forward Transconductance
g
OS*
Common Source Output Conductance
Small Signal Drain Source
R
DS(on)
On Resistance
C
ds
Drain Source Capacitance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
ON
TurnOn Time
t
OFF
TurnOff Time
35
70
0.8
1.6
2
100
500
10
500
1.5
1.8
1.8
5
1.3
1.8
2.6
3.6
0.54
1.5
1.3
1.8
2.6
3.6
170
350
1100
1.3
1.8
30
40
35
50
28
40
2
10
8
10
9
10
V
nA
m
A
A
W
V
ms
m
s
W
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: t
p
80
m
s ,
d
1%
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
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