2N6786
N-Channel MOSFET.
V
DSS
= 400V
I
D
= 1.25A
R
DS(ON)
= 3.6
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter
Min.
Typ.
Max.
Units
V
DSS
Drain Source Breakdown Voltage
400
V
I
D
Continuous Drain Current
1.25
A
P
D
Power
Dissipation
15
W
R
DS(ON)
Static Drain Source OnState Resistance
3.6
C
ISS
Input
Capacitance
170 pF
Q
g
Total Gate Charge
8.4
nC
t
td(on)
TurnOn Delay Time
15
ns
t
tr
Rise
Time
20
ns
t
td(off)
TurnOff Delay Time
35
ns
t
f
Fall
Time
30
ns
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
11-Oct-02
TO39 (TO205AF)
PINOUTS
1 Source
2 Gate
3 - Drain
N-Channel MOSFET
in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)
max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45
1
2
3
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