2N7085
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DS
Drain Source Voltage
V
GS
Gate Source Voltage
I
D
Continuous Drain Current (T
J
= 150C)
T
C
= 25C
T
C
= 100C
I
DM
Pulsed Drain Current
P
D
Power Dissipation
T
C
= 25C
T
C
= 100C
T
J
, T
stg
Operating Junction and Storage Temperature Range
T
L
Lead Temperature (
1/
16
" from case for 10 sec.)
100V
20V
20A
12A
80A
60W
20W
55 to 150C
300C
MECHANICAL DATA
Dimensions in mm(inches)
1 2 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.
41 (
0
.
4
1
0
)
10.
92 (
0
.
4
3
0
)
13.
3
8
(
0
.
527
)
13.
6
4
(
0
.
537
)
1
6
.
3
8 (
0
.
645)
1
6
.
8
9 (
0
.
665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
1
2
.
0
7 (
0
.
500)
1
9
.
0
5 (
0
.
750)
Dia.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
TO257AB Metal Package
NCHANNEL
ENHANCEMENT MODE
TRANSISTOR
FEATURES
TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
SCREENING OPTIONS AVAILBLE
SIMPLE DRIVE REQUIREMENTS
Pin 1 Gate
Pin 2 Drain
Pin 3 Source
V
(BR)DSS
100V
I
D(A)
20A
R
DS(on)
0.075
W
W
W
W
Parameter
Min.
Typ.
Max.
Unit
R
thJC
Thermal resistance Junction-Case
2.1
R
thJA
Thermal resistance Junction-ambient
80
C/W
R
thCS
Thermal resistance Case to Sink
1.0
2N7085
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 250A
V
DS
= V
GS
I
D
= 250A
V
DS
= 0
V
GS
= 20V
V
DS
= 80V
V
GS
= 0
T
J
= 125C
V
DS
= 10V
V
GS
= 10V
V
GS
= 10V
I
D
= 12A
T
J
= 125C
V
DS
= 15V
I
DS
= 12A
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
DS
= 0.5 x V
(BR)DSS
50V
V
GS
= 10V
I
D
= 20A
V
DD
= 50V
I
D
= 20A
V
GEN
=10V
R
L
= 2.5
W
R
G
= 4.7
W
I
F
= 20A
V
GS
= 0
I
F
= 20A
di/dt = 100A/s
ELECTRICAL CHARACTERISTICS
(T
J
= 25C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
DrainSource Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
OnState Drain Current
1
Drain Source OnState
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate Source Charge
2
Gate Drain Charge
2
TurnOn Delay Time
2
Rise Time
2
TurnOff Delay Time
2
Fall Time
2
Continuous Current
Pulsed Current
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
100
2
4
100
25
250
20
0.06
0.075
0.11
0.14
5.0
8.0
1400
480
110
35
50
10
20
18
25
13
30
85
120
35
80
75
95
20
80
2.5
150
400
0.5
V
V
nA
A
A
W
S
pF
nC
ns
A
V
ns
C
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
1
Pulse test : Pulse Width < 300
m
s ,Duty Cycle < 2%
2
Independent of Operating Temperature
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