2N7334
IRFG110
4/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
GS
Gate Source Voltage
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 25C)
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 100C)
I
DM
Pulsed Drain Current
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
R
JC
Thermal Resistance Junction to Case
R
JCA
Thermal Resistance Junction-to-Ambient
20V
1.A
0.6A
4A
1.4W
0.011W/C
75mJ
5.5V/ns
55 to 150C
6.25C/W
175C/W
MECHANICAL DATA
Dimensions in mm (inches)
14
1
8
7
2.134
(0.084)
6.
42
6
0.3
0
5
(
0
.2
53
0
.
0
12)
9.
52
5
0.6
3
5
(
0
.3
75
0
.
0
25)
1.422 0.102
(0.056 0.004)
2.54
(0.100)
0.457 0.102
(0.018 0.004)
19.507 0.432
(0.768 0.017)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
Notes
1) Pulse Test: Pulse Width
300s, 2%
2) @ V
DD
= 25V , L
112mH , R
G
= 25
, Peak I
L
= 1A , Starting T
J
= 25C
3) @ I
SD
1A , di/dt 75A/s , V
DD
BV
DSS
, T
J
150C , Suggested R
G
= 24
14 LEAD DUAL IN LINE QUAD
N CHANNEL
POWER MOSFETS
FEATURES
AVALANCHE ENERGY RATED
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
SIMPLE DRIVE REQUIREMENTS
FOR AUTOMATIC INSERTION
SIMPLE DRIVE REQUIREMENTS
EASE OF PARALLELING
4 N-CHANNEL CO-PACKAGED HEXFETS
LIGHTWEIGHT
N-CHANNEL
1--Drain 1
2--Source 1
3--Gate 1
P-CHANNEL
5--Gate 2
6--Source 2
7--Drain 2
N-CHANNEL
8--Drain 3
9--Source3
10--Gate 3
P-CHANNEL
12--Gate 4
13--Source 4
14--Drain 4
BV
DSS
100V
ID
(cont)
1A
RDS
(on)
0.7
11,4--NC
2N7334
IRFG110
4/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
0.13
0.70
0.80
2
4
0.86
25
250
100
100
180
82
15
15
7.5
7.5
20
25
40
40
1
4
1.5
200
0.83
Negligible
4.0
6.0
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 0.6A
V
GS
= 10V
I
D
= 1A
V
DS
= V
GS
I
D
= 250
A
V
DS
15V
I
DS
= 0.60A
V
GS
= 0
V
DS
= 0.8V
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 1A
V
DS
= 0.5V
DS
V
DD
= 50V
I
D
= 1A
R
G
= 24
I
S
= 1.0A
T
J
= 25C
V
GS
= 0
I
F
= 1A
T
J
= 25C
d
i
/ d
t
100A/s V
DD
50V
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
V
V / C
V
S
(
A
nA
pF
nC
ns
A
V
ns
C
nH
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
300s, 2%
2) Repetitive Rating Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
(
)
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