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Электронный компонент: 2N930CSM

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2N3439CSM4
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
HIGH VOLTAGE, MEDIUM POWER, NPN
TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH VOLTAGE
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N3439 for high reliability / space
applications requiring small size and low
weight devices.
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
B
= 0)
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50C
R
ja
Thermal Resistance Junction to Ambient
T
stg
Storage Temperature
450V
350V
7V
500mA
350mW
2.0mW / C
350C/W
55 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
LCC3 PACKAGE
Underside View
PAD 1 Collector
PAD 2 N/C
PAD 3 Emitter
PAD 4 Base
1
2
3
4
5.59 0.13
(0.22 0.005)
0.23
(0.009)
rad.
1.02 0.20
(0.04 0.008)
2.03 0.20
(0.08 0.008)
1.40 0.15
(0.055 0.006)
0.25 0.03
(0.01 0.001)
0.23
(0.009)
min.
1.
27 0.
05
(
0
.
05 0.
002
)
3.
81 0.
13
(
0
.
15 0.
00
5)
0.
64 0.
08
(
0
.
0
25 0.
003)
2N3439CSM4
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 50mA
I
B
= 0
V
CE
= 450V
I
E
= 0
V
CB
= 300V
T
C
= 125C
I
C
= 0
V
EB
= 6V (off)
I
C
= 50mA
I
B
= 4mA
I
C
= 50mA
I
B
= 4mA
I
C
= 20mA
I
C
= 10mA
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
V
CEO(sus)*
Collector Emitter Sustaining Voltage
I
CEX*
Collector Cut-off Current (I
C
= 0)
I
CBO*
Collector Base Cut-off Current
I
EBO*
Emitter Cut-off Current (I
C
= 0)
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
350
500
20
10
20
0.5
1.3
40
160
V
A
A
A
A
V
--
f
T
Transition Frequency
C
ob
Output Capacitance
hfe
Small Signal Current Gain
I
C
= 10mA
V
CE
= 10V
f = 5MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
I
C
= 5mA
V
CE
= 10V
f = 1kHz
15
10
25
MHz
pF
* Pulse test t
p
= 300
s ,
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)