IRF044SMD
Prelim. 7/00
LAB
SEME
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
V
GS
Gate Source Voltage
I
D
Continuous Drain Current
(V
GS
= 0 , T
case
= 25C)
I
D
Continuous Drain Current
(V
GS
= 0 , T
case
= 100C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
T
L
Package Mounting Surface Temperature (for 5 sec)
R
q
JC
Thermal Resistance Junction to Case
R
q
JPCB
Thermal Resistance Junction to PCB (Typical)
20V
34A
21A
136A
75W
0.6W/C
340mJ
4.5V/ns
55 to 150C
300C
1.67C/W
4C/W
MECHANICAL DATA
Dimensions in mm (inches)
3 . 6 0 ( 0 . 1 4 2 )
M a x .
3 . 7 0 ( 0 . 1 4 6 )
3 . 4 1 ( 0 . 1 3 4 )
3 . 7 0 ( 0 . 1 4 6 )
3 . 4 1 ( 0 . 1 3 4 )
0 . 8 9
( 0 . 0 3 5 )
m i n .
4.
14
(
0.
163)
3.
84
(
0.
151)
10.
69
(
0
.
4
21)
10.
39
(
0
.
4
09)
9 . 6 7 ( 0 . 3 8 1 )
9 . 3 8 ( 0 . 3 6 9 )
1 1 . 5 8 ( 0 . 4 5 6 )
1 1 . 2 8 ( 0 . 4 4 4 )
16.
02
(
0
.
6
31)
15.
73
(
0
.
6
19)
0 . 5 0 ( 0 . 0 2 0 )
0 . 2 6 ( 0 . 0 1 0 )
0.
76
(
0
.
030) mi
n
.
1
3
2
NCHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
SMD1 Surface Mount Package
Pad 1 Gate
Pad 2 Drain
Pad 3 Source
Note:
IRFNxxx also available with
pins 1 and 3 reversed.
Notes
1) Pulse Test: Pulse Width
300ms,
d
2%
2) @ V
DD
= 25V , L
0.3mH , R
G
= 25
W
, Peak I
L
= 34A , Starting T
J
= 25C
3) @ I
SD
34A , di/dt
100A/
m
s , V
DD
BV
DSS
, T
J
150C , SUGGESTED R
G
= 9.1
W
V
DSS
60V
I
D(cont)
34A
R
DS(on)
0.040
W
W
W
W
IRF044SMD
Prelim. 7/00
LAB
SEME
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 21A
V
GS
= 10V
I
D
= 34A
V
DS
= V
GS
I
D
= 250
m
A
V
DS
15V
I
DS
= 21A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 34A
V
DS
= 0.5BV
DSS
I
D
= 34A
V
DS
= 0.5BV
DSS
V
DD
= 30V
I
D
= 34A
R
G
= 9.1
W
I
S
= 34A
T
J
= 25C
V
GS
= 0
I
F
= 34A
T
J
= 25C
d
i
/ d
t
100A/
m
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate Source Charge
1
Gate Drain ("Miller") Charge
1
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
60
0.68
0.040
0.050
2
4
17
25
250
100
100
2400
1100
230
39
88
6.7
15
18
52
23
130
81
79
34
136
2.5
220
1.6
Negligible
0.8
2.8
V
V / C
W
V
S
(
W
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
300ms,
d
2%
2) Repetitive Rating Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
(
W
)
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