IRF240
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
MECHANICAL DATA
Dimensions in mm (inches)
40.01 (1.575)
Max.
4.47 (0.176)
Rad.
2 Pls.
22.23 (0.875)
Max.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
11.18 (0.44)
1.63 (0.064)
1.52 (0.060)
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
16.97 (0.668)
16.87 (0.664)
4.09 (0.161)
3.84 (0.151)
2 Pls
11.18 (0.440)
10.67 (0.420)
26.67
(1.050)
Max.
2
1
TO3 METAL PACKAGE
NCHANNEL
POWER MOSFET
FOR HIREL
APPLICATIONS
FEATURES
HERMETICALLY SEALED TO3 METAL
PACKAGE
SIMPLE DRIVE REQUIREMENTS
SCREENING OPTIONS AVAILABLE
Pin 1 = Source
Pin 2 Gate
V
DSS
200V
I
D(cont)
18A
R
DS(on)
0.18
W
W
W
W
V
GS
Gate Source Voltage
I
D
Continuous Drain Current @ T
case
= 25C
I
D
Continuous Drain Current @ T
case
= 100C
I
DM
Pulsed Drain Current
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
T
J
, T
stg
Operating and Storage Temperature Range
R
q
JC
Thermal Resistance Junction to Case
R
q
JA
Thermal Resistance Junction to Ambient
20V
18A
11A
72A
125W
1.0W/C
55 to 150C
1.0C/W max.
30C/W max.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
IRF240
Prelim. 6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 11A
V
GS
= 10V
I
D
= 18A
V
DS
= V
GS
I
D
= 250
m
A
V
DS
15V
I
DS
= 11A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 18A
V
DS
= 0.5BV
DSS
I
D
= 18A
V
DS
= 0.5BV
DSS
V
DD
= 100V
I
D
= 18A
R
G
= 9.1
W
I
S
= 18A
T
J
= 25C
V
GS
= 0
I
S
= 18A
T
J
= 25C
d
i
/ d
t
100A/
m
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
200
0.29
0.18
0.21
2
4
6.1
25
250
100
-100
1300
400
130
32
60
2.2
10.6
14
38
20
152
58
67
18
72
1.5
500
5.3
5.0
13
V
V / C
W
V
S
(
W
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
PACKAGE CHARACTERISTICS
(
W
)
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