IRFN130SMD
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 7/00
V
GS
Gate Source Voltage
I
D
Continuous Drain Current @ T
case
= 25C
I
D
Continuous Drain Current @ T
case
= 100C
I
DM
Pulsed Drain Current
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
T
J
, T
stg
Operating and Storage Temperature Range
R
q
JC
Thermal Resistance Junction to Case
20V
11A
7A
44A
45W
0.36W/C
55 to 150C
2.8C/W max.
MECHANICAL DATA
Dimensions in mm (inches)
3 . 7 0 ( 0 . 1 4 6 )
3 . 4 1 ( 0 . 1 3 4 )
3 . 7 0 ( 0 . 1 4 6 )
3 . 4 1 ( 0 . 1 3 4 )
0 . 8 9
( 0 . 0 3 5 )
m i n .
4.
14
(
0.
163)
3.
84
(
0.
151)
10.
69
(
0
.
4
21)
10.
39
(
0
.
4
09)
16.
02
(
0
.
6
31)
15.
73
(
0
.
6
19)
0.
76
(
0
.
030) mi
n
.
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
SMD1
NCHANNEL
POWER MOSFET
FOR HIREL
APPLICATIONS
FEATURES
HERMETICALLY SEALED
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
SCREENING OPTIONS AVAILABLE
ALL LEADS ISOLATED FROM CASE
Pad 1 Source
Pad 2 Drain
Pad 3 Gate
V
DSS
100V
I
D(cont)
11A
R
DS(on)
0.19
W
W
W
W
* Also available as IRF130SM with Pin1(Source) and Pin3 (Gate) reversed.
IRFN130SMD
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 7/00
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 7A
V
GS
= 10V
I
D
= 11A
V
DS
= V
GS
I
D
= 250
m
A
V
DS
15V
I
DS
= 7A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 11A
V
DS
= 0.5BV
DSS
I
D
= 11A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 11A
R
G
= 7.5
W
I
S
= 11A
T
J
= 25C
V
GS
= 0
I
S
= 11A
T
J
= 25C
d
i
/ d
t
100A/
m
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.19
0.22
2
4
3
25
250
100
-100
650
240
44
12.8
28.5
1.0
6.3
3.8
16.6
30
75
40
45
11
43
1.5
300
3
8.7
8.7
V
V / C
W
V
S
(
W
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
PACKAGE CHARACTERISTICS
(
W
)
PDF 
ZIP