IRF460
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
1
2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.
61 (
1
.
52)
39.
12 (
1
.
54)
29.
9 (
1
.
177)
30.
4 (
1
.
197)
16.
64 (
0
.
655)
17.
15 (
0
.
675)
3.84 (0.151)
4.09 (0.161)
0.
97 (
0
.
060)
1.
10 (
0
.
043)
7.92 (0.312)
12.70 (0.50)
22.
23
(
0
.
875)
ma
x
.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
TO3 (TO204AA) Package Outline.
Dimensions in mm (inches)
Drain Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate Source Voltage
Total Power Dissipation @ T
case
= 25C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063" from Case for 10 Sec.
V
GS
= 0V , I
D
= 1mA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125C
V
GS
= 20V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 250
A
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 13A
V
GS
= 10V , I
D
= 21A
NCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
500
21
84
20
300
2.4
55 to 150
300
V
A
A
V
W
W/C
C
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain Source On State Resistance
2
500
25
250
100
2
4
21
0.27
0.31
V
A
nA
V
A
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS
(T
case
= 25C unless otherwise stated)
V
DSS
500V
I
D(cont)
21A
R
DS(on)
0.27
Pin 1 Gate
Pin 2 Source
Case Drain
IRF460
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
21
84
1.8
580
8.1
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= I
D
[Cont.]
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
s
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
s
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
C
Characteristic
Min.
Typ.
Max. Unit
0.42
30
R
JC
R
JA
Junction to Case
Junction to Ambient
C/W
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
3) See MILSTD750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate Source Charge
Gate Drain ("Miller") Charge
Turnon Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 1.8
pF
nC
ns
2890
590
230
140
190
18
27
75
135
19
35
43
120
85
130
56
98
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
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