IRFE130
10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
V
GS
Gate Source Voltage
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 25C)
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 100C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
20V
7.4A
4.7A
30A
22W
0.17W/C
75mJ
5.5V/ns
-55 to +150C
300C
MECHANICAL DATA
Dimensions in mm (inches)
NCHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
FEATURES
SURFACE MOUNT
SMALL FOORPRINT
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
AVALANCHE ENERGY RATING
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
LCC4
Notes
1) Pulse Test: Pulse Width
300
s,
2%
2) @ V
DD
= 50V , L
570
H , R
G
= 25
, Peak I
L
= 14A , Starting T
J
= 25C
3) @ I
SD
14A , di/dt
140A/
s , V
DD
BV
DSS
, T
J
150C , Suggested R
G
= 7.5
V
DSS
100V
I
D(cont)
7.44A
R
DS(on)
0.207
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 16
13
12
14
3
4
5
6
7
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.08 (0.003)
0.43 (0.017)
0.18 (0.007
Rad.
Rad.
MOSFET
TRANSISTOR
PINS
GATE
BASE
4,5
DRAIN
COLLECTOR
1,2,15,16,17,18
SOURCE
EMITTER
6,7,8,9,10,11,12,13
IRFE130
10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
0.10
0.18
0.207
2
4
3
25
250
100
100
650
240
44
12.8
28.5
1.0
6.3
3.8
16.6
30
75
40
45
7.4
30
1.5
300
3.0
Negligible
1.8
4.3
5.8
19
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 4.7A
V
GS
= 10V
I
D
= 7.4A
V
DS
= V
GS
I
D
= 250mA
V
DS
15V
I
DS
= 4.7A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 7.4A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 7.4A
R
G
= 7.5
I
S
= 7.4A
T
J
= 25C
V
GS
= 0
I
F
= 7.4A
T
J
= 25C
d
i
/ d
t
100A/
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward TurnOn Time
V
V / C
V
S (
)
A
nA
pF
nC
ns
A
V
ns
C
nH
C/W
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
JC
R
JPC
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
300ms,
2%
2) Repetitive Rating Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
Thermal Resistance Junction Case
Thermal Resistance Junction PC Board
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
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