IRFM054
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/94
V
GS
Gate Source Voltage
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 25C)
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 100C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
T
L
Lead Temperature measured
1/
16
" (1.6mm) from case for 10 sec.
R
JC
Thermal Resistance Junction to Case
R
CS
Thermal Resistance Case to Sink (Typical)
R
JA
Thermal Resistance Junction to Ambient
20V
35A*
35A
220A
150W
1.2W/C
480mJ
4.5V/ns
55 to 150C
300C
0.83C/W
0.21C/W
48C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149)
Dia.
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.
35 (
1
.
195)
31.
40 (
1
.
235)
16.
89 (
0
.
665)
17.
40 (
0
.
685)
13.
59 (
0
.
5
35)
13.
84 (
0
.
5
45)
2
0
.
07 (0.
790)
2
0
.
32 (0.
800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
TO254AA Metal Package
Notes
1) Repetitive Rating Pulse width limited by Maximum Junction Temperature
2) @ V
DD
= 25V , L
450
H , R
G
= 25
, Peak I
L
= 35A , Starting T
J
= 25C
3) @ I
SD
35A , di/dt
200A/
s , V
DD
BV
DSS
, T
J
125C , SUGGESTED R
G
= 2.35
* I
D
Current limited by pin diameter.
NCHANNEL
POWER MOSFET
FEATURES
HERMETICALLY SEALED ISOLATED
PACKAGE
AVALANCHE ENERGY RATING
SIMPLE DRIVE REQUIREMENTS
ALSO AVAILABLE IN TO220 METAL AND
SURFACE MOUNT PACKAGES
EASE OF PARALLELING
Pin 1 Drain
Pin 2 Source
Pin 3 Gate
V
DSS
60V
I
D(cont)
35A
R
DS(on)
0.027
*
IRFM054
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/94
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 35A
V
DS
= V
GS
I
D
= 250
A
V
DS
15V
I
DS
= 35A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 35A
V
DS
= 0.5BV
DSS
V
DD
= 30V
I
D
= 35A
R
G
= 2.35
I
S
= 35A
T
J
= 25C
V
GS
= 0
I
F
= 35A
T
J
= 25C
d
i
/ d
t
100A/
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain Case Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
Turn On Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward TurnOn Time
60
0.68
0.027
2
4
20
25
250
100
100
4600
2000
340
12
80
180
20
45
34
105
33
180
100
100
35*
220
2.5
280
2.2
Negligible
8.7
8.7
V
V / C
V
S
(
A
nA
pF
nC
ns
A
V
ns
C
nH
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
STATIC ELECTRICAL RATINGS
1) Repetitive Rating Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width
300
s,
2%
*
I
S
Current limited by pin diameter.
Notes
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
PACKAGE CHARACTERISTICS
(
)
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