Prelim. 05/00
IRFM350
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
GS
Gate Source Voltage
I
D
Continuous Drain Current
@ V
GS
= 10V , T
C
= 25C
@ V
GS
= 10V , T
C
= 100C
I
DM
Pulsed Drain Current
P
D
Max. Power Dissipation
@ T
C
= 25C
Linear Derating Factor
I
L
Avalanche Current , Clamped
1
dv / dt
Peak Diode Recovery
2
R
q
JC
Thermal Resistance Junction Case
R
q
JA
Thermal Resistance Junction Ambient
R
q
CS
Thermal Resistance Case Sink
T
J
, T
STG
Operating Junction and Storage Temperature Range
T
L
Lead Temperature (1.6mm from case for 10s)
20V
14A
9.0A
56A
150W
1.2W / C
14A
4V / ns
0.83C / W
48C / W
0.21C / W typ.
55 to 150C
300C
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149)
Dia.
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.
35 (
1
.
195)
31.
40 (
1
.
235)
16.
89 (
0
.
665)
17.
40 (
0
.
685)
13.
59 (
0
.
5
35)
13.
84 (
0
.
5
45)
2
0
.
07 (0.
790)
2
0
.
32 (0.
800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO254AA Isolated Metal Package
Pin 1 Drain
Pin 2 Source
Pin 3 Gate
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25C unless otherwise stated)
1)
V
DD
= 50V , Starting T
J
= 25C , L
1mH , R
G
= 25
W
, Peak I
L
= 27.4A
2)
I
SD
27.4A , di/dt
190A /
m
S , V
DD
BV
DSS
, T
J
150C , Suggested R
G
= 2.35
W
NCHANNEL
POWER MOSFET
FEATURES
NCHANNEL MOSFET
HIGH VOLTAGE
INTEGRAL PROTECTION DIODE
HERMETIC ISOLATED TO-254 PACKAGE
CERAMIC SURFACE MOUNT PACKAGE
OPTION
V
DSS
400V
I
D(cont)
14A
R
DS(on)
0.315
W
W
W
W
Prelim. 05/00
IRFM350
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 9A
V
GS
= 10V
I
D
= 14A
V
DS
= V
GS
I
D
= 250
m
A
V
DS
15V
I
DS
= 9A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 14A
V
DS
= 0.5BV
DSS
V
DD
= 200V
I
D
= 14A
R
G
= 2.35
W
I
S
= 14A
T
J
= 25C
V
GS
= 0
I
F
= 14A
T
J
= 25C
d
i
/ d
t
100A/
m
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(T
J
= 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain Case Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
Turn On Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward TurnOn Time
400
0.46
0.315
0.415
2
4
6
25
250
100
100
2600
660
250
12
52
110
5
18
25
65
35
190
170
130
14
56
1.7
1200
11
Negligible
8.7
8.7
V
V / C
W
V
S
(
W
m
A
nA
pF
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
STATIC ELECTRICAL RATINGS
1) Repetitive Rating Pulse width limited by Maximum Junction Temperature
2) Pulse Test: Pulse Width
300
m
s,
d
2%.
Notes
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
PACKAGE CHARACTERISTICS
(
W
)
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