IRFY044C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95
MECHANICAL DATA
Dimensions in mm (inches)
16.
38
16.
89
13.
3
9
13.
6
4
10
.
4
1
10
.
9
2
12.
70
19.
05
2.54
BSC
10.41
10.67
3.56
3.81
Dia.
0.70
0.90
2.65
2.75
0.89
1.14
4.70
5.00
1 2 3
TO220M Metal Package
NCHANNEL
POWER MOSFET
FOR HIREL
APPLICATIONS
FEATURES
HERMETICALLY SEALED TO220 METAL
PACKAGE
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
ALL LEADS ISOLATED FROM CASE
Pad 1 Gate
Pad 2 Drain
Pad 3 Source
V
DSS
60V
I
D(cont)
20A
R
DS(on)
0.035
V
GS
Gate Source Voltage
I
D
Continuous Drain Current @ T
C
= 25C
I
D
Continuous Drain Current @ T
C
= 100C
I
DM
Pulsed Drain Current
P
D
Power Dissipation @ T
C
= 25C
Linear Derating Factor
T
J
, T
stg
Operating and Storage Temperature Range
R
JC
Thermal Resistance Junction to Case
R
JA
Thermal Resistance Junction to Ambient
20V
20A
20A
128A
60W
0.48W/C
55 to 150C
2.1C/W max.
80C/W max.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25C unless otherwise stated)
AVAILABLE SCREENINGS
FULL ASSESSMENT LEVEL
IRFY044C.MOD
IRFY044CJ
SEQUENCE A
IRFY004C-A
IRFY044CJXV
SEQUENCE B
IRFY004C-B
IRFY044CJTX
SEQUENCE C
IRF044C-C
SEQUENCE D
IRFY044C-D
Ceramic Lead Seals
IRFY044C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= 20A
V
DS
= V
GS
I
D
= 250
A
V
DS
15V
I
D
= 20A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 20A
V
DS
= 0.5BV
DSS
V
GS
= 10V
V
DD
= 30V
I
D
= 20A
R
G
= 9.1
I
S
= 20A
T
J
= 25C
V
GS
= 0
I
F
= 20A
T
J
= 25C
d
i
/ d
t
100A/
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
60
0.68
0.035
2
4
17
25
250
100
100
2400
1100
230
39
88
6.7
15
18
52
23
130
81
79
20
128
2.5
220
1.6
8.7
8.7
V
V / C
V
S
(
A
nA
pF
nC
ns
A
V
ns
C
nH
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
PACKAGE CHARACTERISTICS
(
)
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