IRFY220
V
DSS
= 200V
I
D
= 4A
R
DS(ON)
= 0.92
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter
Min.
Typ.
Max.
Units
V
DSS
Drain Source Breakdown Voltage
200
V
I
D
Continuous Drain Current
4
A
P
D
Power
Dissipation
14
W
R
DS(ON)
Static Drain Source OnState Resistance
0.92
C
ISS
Input
Capacitance
260 pF
Q
g
Total Gate Charge
14.3
nC
t
td(on)
TurnOn Delay Time
40
ns
t
tr
Rise
Time
50
ns
t
td(off)
TurnOff Delay Time
50
ns
t
f
Fall
Time
50
ns
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
13-Sep-02
TO257AB (TO220M)
PINOUTS
1 Gate
2 Drain
Case Source
N-Channel MOSFET in
a Hermetically sealed
TO257AB Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
16.5 (0.65)
1.5(0.53)
10.6 (0.42)
12.70 (0.50 m
i
n
)
2.54 (0.1)
BSC
3.70 Dia. Nom
1 2 3
0.8
(0.03)
2.70
(0.106)
1.0
(0.039)
4.6 (0.18)
10.6 (0.42)
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