IRFY9140C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
MECHANICAL DATA
Dimensions in mm (inches)
PCHANNEL
POWER MOSFET
FOR HIREL
APPLICATIONS
V
DSS
-100V
I
D(cont)
-12A
R
DS(on)
0.21
V
GS
Gate Source Voltage
I
D
Continuous Drain Current @ T
case
= 25C
I
D
Continuous Drain Current @ T
case
= 100C
I
DM
Pulsed Drain Current
P
D
Power Dissipation @ T
case
= 25C
Linear Derating Factor
T
J
, T
stg
Operating and Storage Temperature Range
R
JC
Thermal Resistance Junction to Case
R
JA
Thermal Resistance Junction to Ambient
20V
-12A
-8A
-48A
60W
0.48W/C
55 to 150C
2.1C/W max.
80C/W max.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
1 2 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.
41 (
0
.
4
1
0
)
10.
92 (
0
.
4
3
0
)
13.
3
8
(
0
.
527
)
13.
6
4
(
0
.
537
)
1
6
.
3
8 (
0
.
645)
1
6
.
8
9 (
0
.
665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
1
2
.
0
7 (
0
.
500)
1
9
.
0
5 (
0
.
750)
Dia.
TO257AA Metal Package
FEATURES
HERMETICALLY SEALED TO257AA
METAL PACKAGE
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
SCREENING OPTIONS AVAILABLE
ALL LEADS ISOLATED FROM CASE
Pad 1 Gate
Pad 2 Drain
Pad 3 Source
IRFY9140C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25C
I
D
= 1mA
V
GS
= 10V
I
D
= -8.2A
V
GS
= 10V
I
D
= -12A
V
DS
= V
GS
I
D
= 250
A
V
DS
15V
I
DS
= -8.2A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125C
V
GS
= 20V
V
GS
= 20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= -12A
V
DS
= 0.5BV
DSS
I
D
= -12A
V
DS
= 0.5BV
DSS
V
DD
= -50V
I
D
= -12A
R
G
= 9.1
I
S
= -12A
T
J
= 25C
V
GS
= 0
I
S
= -12A
T
J
= 25C
d
i
/ d
t
100A/
s V
DD
50V
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate Source Leakage
Reverse Gate Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain ("Miller") Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-100
-0.09
0.21
0.24
-2
-4
6.2
25
250
100
-100
1400
600
200
31
60
3.7
13
7
35.2
35
85
85
65
-12
-48
-4.2
280
3.6
8.7
8.7
V
V / C
V
S
(
A
nA
pF
nC
nC
ns
A
V
ns
C
nH
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
PACKAGE CHARACTERISTICS
(
)
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