SML100J22
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
5/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate Source Voltage
Gate Source Voltage Transient
Total Power Dissipation @ T
case
= 25C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
NCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
22
88
30
40
500
4
55 to 150
300
22
30
1300
V
A
A
V
W
W/C
C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25C, L = 15.38mH, R
G
= 25
, Peak I
L
= 22A
V
DSS
1000V
I
D(cont)
22A
R
DS(on)
0.430
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular SOT227 Package
StarMOS is a new generation of high voltage
NChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
3
4
2
R
3 8 .0 (1 .4 9 6 )
3 8 .2 (1 .5 0 4 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
1 4 .9 (0 .5 8 7 )
1 5 .1 (0 .5 9 4 )
3 .3 (0 .1 2 9 )
3 .6 (0 .1 4 3 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
4 .0 (0 .1 5 7 )
(2 P la c e s)
R =
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
)
)
4 .1 (0 .1 6 1
4 .3 (0 .1 6 9
4 .8 (0 .1 8 7 )
4 .9 (0 .1 9 3 )
(4 places)
W =
H =
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
Hex Nut M 4
(4 places)
12.
6
(
0
.
4
9
6
)
12.
8
(
0
.
5
0
4
)
2
5
.
2 (
0
.
9
92
)
2
5
.
4 (
1
.
0
00
)
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
SOT227 Package Outline.
Dimensions in mm (inches)
Source terminals are shorted
internally. Current handling
capability is equal for
either Source terminal.
*
S
G
S
D
SML100J22
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
5/99
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
22
88
1.3
560
12
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= I
D
[Cont.]
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
s
I
S
= I
D
[Cont.] , dl
s
/ dt = 100A/
s
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
C
Characteristic
Min.
Typ.
Max. Unit
0.25
40
R
JC
R
JA
Junction to Case
Junction to Ambient
C/W
SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
S , Duty Cycle < 2%
3) See MILSTD750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate Source Charge
Gate Drain ("Miller") Charge
Turnon Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 0.6
pF
nC
ns
7500
675
310
320
38
169
18
12
63
11
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
V
GS
= 0V , I
D
= 250
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125C
V
GS
= 30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
Drain Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain Source On State Resistance
2
1000
50
500
100
2
4
22
0.43
V
A
nA
V
A
STATIC ELECTRICAL RATINGS
(T
case
= 25C unless otherwise stated)
DYNAMIC CHARACTERISTICS
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