ChipFind - документация

Электронный компонент: ZVP2106B

Скачать:  PDF   ZIP
ZVP2106B
11/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
GS
Gate Source Voltage
V
DS
Drain Source Voltage
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 25C)
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 100C)
I
DM
Pulsed Drain Current
P
D
Power Dissipation @ T
A
= 25C
P
D
Power Dissipation @ T
C
= 25C
T
J
, T
stg
Operating and Storage Temperature Range
20
-60V
0.28A
-0.76A
-4A
0.7W
5W
55 to 150C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
TO39
P CHANNEL ENHANCEMENT
MODE DMOS FET
FEATURES
FAST SWITCHING SPEEDS
NO SECONDARY BREAKDOWN
EXCELLENT TEMPERATURE STABILITY
HIGH INPUT IMPEDANCE
LOW CURRENT DRIVE
EASE OF PARALLELING
BV
DSS
- 60V
ID
(cont)
0.76A
RDS
(on)
0.5
Pin 1 Source
Pin 2 Gate
Pin 3 Drain
ZVP2106B
11/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
- 60
5
- 1.5
- 3.5
150
- 0.5
- 100
- 1
100
60
20
7
15
12
15
V
GS
= 0
I
D
= - 1mA
V
GS
= -10V
I
D
= 500mA
V
DS
= V
GS
I
D
= - 1mA
V
DS
=
-18V
I
D
= 500mA
V
GS
= 0
V
DS
= 0.8V
DSS
T = 125C
V
DS
= - 18V
V
GS
= 10V
V
GS
= 0
V
DS
= -18V
f = 1MHz
V
DD
= -18V
I
D
= -500mA
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
Drain Source Breakdown Voltage
Static Drain Source OnState
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1,2
Zero Gate Voltage Drain Current
On-state drain current
1
Input Capacitance
2
Output Capacitance
2
Reverse Transfer Capacitance
2
TurnOn Delay Time
2,3
Rise Time
2,3
TurnOff Delay Time
2,3
Fall Time
2,3
V
V
mS
A
A
pF
ns
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
D(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Notes
1) Pulse Test: Pulse Width
300
s,
2%
2) Sample
3) Switching times measured with 50
source inpedance and < 5ns rise time on a pulse generator.