2N720A
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N720AJ)
JANTX level (2N720AJX)
JANTXV level (2N720AJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed TO-18 metal can
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/182
Benefits
Qualification Levels: JAN, JANTX,
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
80
Volts
Collector-Base Voltage
V
CBO
120
Volts
Emitter-Base Voltage
V
EBO
7
Volts
Collector Current, Continuous
I
C
500
mA
Power Dissipation, T
A
= 25
O
C
Derate linearly above 37.5
O
C
P
T
0.5
3.08
W
mW/
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
P
T
1.8
10.3
W
mW/
C
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Thermal Resistance
R
JA
325
C/W
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N720A
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 30 mA
80
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CER
I
C
= 10 mA, R
BE
= 10
100
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 120 Volts
V
CB
= 90 Volts
V
CE
= 90 Volts, T
A
= 150
O
C
100
10
15
A
nA
A
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 7 Volts
V
EB
= 5 Volts
100
10
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 1 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts,
T
A
= -55
O
C
20
35
40
20
120
Base-Emitter Saturation Voltage
V
BEsat
I
C
= 150 mA, I
B
= 15 mA
1.3
Volts
Collector-Emitter Saturation Voltage
V
CEsat
I
C
= 150 mA, I
B
= 15 mA
5.0
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 50 mA,
f = 20 MHz
3 10
Short Circuit Forward Current Transfer
Ratio
h
FE1
h
FE2
f = 1 kHz
V
CE
= 5 Volts, I
C
= 1 mA
V
CE
= 10 Volts, I
C
= 5 mA
35
45
100
150
Short Circuit Input Impedance
h
ie
V
CB
= 10V, I
C
= 5mA
4
8
Open Circuit Output Admittance
h
oe
V
CB
= 10V, I
C
= 5mA
0.5
Open Circuit reverse Voltage Transfer
Ratio
h
re
V
CB
= 10V, I
C
= 5mA
1.5x10
-4
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
2 15
pF
Switching Characteristics
Pulse Response
t
on
+ t
off
30
ns
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