Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N918UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N918UBJ)
JANTX level (2N918UBJX)
JANTXV level (2N918UBJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
Ultra-high frequency transistor
Low power
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0003
Reference document:
MIL-PRF-19500/301
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
C unless otherwise specified
Parameter Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
15
Volts
Collector-Base Voltage
V
CBO
30
Volts
Emitter-Base Voltage
V
EBO
3
Volts
Collector Current, Continuous
I
C
50
mA
Power Dissipation, T
A
= 25
C
Derate linearly above 25
C
P
T
200
1.14
mW
mW/
C
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N918UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
C
Off Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 3 mA
15
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 25 Volts
V
CB
= 30 Volts
V
CB
= 25 Volts, T
A
= 150
C
10
1
1
nA
A
A
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 2.5 Volts
V
EB
= 3 Volts
10
10
nA
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle 2.0%
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
I
C
= 0.5 mA, V
CE
= 10 Volts
I
C
= 3 mA, V
CE
= 1 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 3 mA, V
CE
= 1 Volts
T
A
= -55
C
10
20
20
10
200
Base-Emitter Saturation Voltage
V
BEsat
I
C
= 10 mA, I
B
= 1 mA
1.0
Volts
Collector-Emitter Saturation Voltage
V
CEsat
I
C
= 10 mA, I
B
= 1 mA
0.4
Volts
Dynamic Characteristics
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 4 mA,
f = 100 MHz
6 18
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
1.7
pF
Noise Figure
NF
V
CE
= 6 Volts, I
C
= 1 mA,
f = 60 MHz, R
g
= 2.5 M
6
dB
Power Gain
G
pe
V
CB
= 12 Volts, I
C
= 6 mA,
f = 200 MHz
15
dB
Collector Base time constant
r
b
'C
C
V
CB
= 10 Volts, I
E
= -4 mA,
f = 79.8 MHz
25
ps
Collector efficiency
V
CB
= 15 Volts, I
C
= 8 mA,
f = 500 MHz
30
mW
Oscillator Power Output
P
O
V
CB
= 15 Volts, I
C
= 8 mA,
f = 500 MHz
25
%
PDF 
ZIP