Copyright 2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2060
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N2060J)
JANTX level (2N2060JX)
JANTXV level (2N2060JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
Matched, Dual Transistors
Low power
NPN silicon transistor
Features
Hermetically sealed TO-77 metal can
Also available in chip configuration
Chip geometry 0410
Reference document:
MIL-PRF-19500/270
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
T
C
= 25 C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
60
Volts
Collector-Base Voltage
V
CBO
100
Volts
Emitter-Base Voltage
V
EBO
7
Volts
Collector Current, Continuous
I
C
500
mA
Power Dissipation, T
A
= 25 C
Derate linearly above 25 C
P
T
540 one section
600 both sections
3.08 one section
3.48 both sections
mW
mW
mW/ C
mW/ C
Power Dissipation, T
C
= 25 C
Derate linearly above 25 C
P
T
1.5 one section
2.12 both sections
8.6 one section
12.1 both sections
W
W
mW/ C
mW/ C
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
C
Copyright 2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N2060
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25 C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 30 mA
60
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CER
I
C
= 10 mA, R
BE
= 10
80
Volts
Collector-Base Cutoff Current
I
CBO1
I
CBO2
I
CBO3
V
CB
= 100 Volts
V
CB
= 80 Volts
V
CB
= 80 Volts, T
A
= 150 C
10
2
10
A
nA
A
Collector-Emitter Cutoff Current
I
CEO
V
CE
= xx Volts
A
Collector-Emitter Cutoff Current
I
CEX
V
CE
= xx Volts, V
EB
= x Volts
A
Collector-Emitter Cutoff Current
I
CES
V
CE
= xx Volts
nA
Emitter-Base Cutoff Current
I
EBO1
I
EBO2
V
EB
= 7 Volts
V
EB
= 5 Volts
10
2
A
nA
On Characteristics
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
I
C
= 10 A, V
CE
= 5 Volts
I
C
= 100 A, V
CE
= 5 Volts
I
C
= 1 mA, V
CE
= 5 Volts
I
C
= 10 mA, V
CE
= 5 Volts
I
C
= 100 A, V
CE
= 5 Volts
T
A
= -55 C
25
30
40
50
10
75
90
120
150
Base-Emitter Voltage Differential |V
BE1
- V
BE2
|
1
|V
BE1
- V
BE2
|
2
V
CE
= 5 Volts, I
C
= 100 A
V
CE
= 5 Volts, I
C
= 1 mA
5
mVolts
Base-Emitter Voltage Differential
change with temperature
|V
BE1
- V
BE2
|
1
|V
BE1
- V
BE2
|
2
V
CE
= 5 Volts, I
C
= 100 A
T
A
= 25 C and -55 C
V
CE
= 5 Volts, I
C
= 1 mA
T
A
= 25 C and +125 C
.8
1
mVolts
Copyright 2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 3 of 3
www.SEMICOA.com
2N2060
Silicon NPN Transistor
Data Sheet
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
V
CE
= 10 Volts, I
C
= 50 mA,
f = 20 MHz
3
25
Small Signal Short Circuit Forward
Current Transfer Ratio
h
FE
V
CE
= 5 Volts, I
C
= 1 mA,
f = 1 kHz
50
150
Open Circuit Output Capacitance
C
OBO
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
15
pF
Open Circuit Input Capacitance
C
IBO
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
85
pF
Noise Figure
NF
1
NF
2
V
CE
= 10 Volts, I
C
= 300 A,
f = 1 kHz, R
g
= 510
V
CE
= 10 Volts, I
C
= 300 A,
f = 10 kHz, R
g
= 1 k
8
8
dB
Short Circuit Input Impedance
h
ib
V
CB
= 5V, I
C
= 1mA, f = 1kHz
20
30
Short Circuit Input Impedance
h
ie
V
CB
= 5V, I
C
= 1mA, f = 1kHz
1
4
k
Open Circuit Output Admittance
h
oe
V
CB
= 5V, I
C
= 1mA, f = 1kHz
16
mhos
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